Journal of Infrared and Millimeter Waves, Volume. 39, Issue 4, 417(2020)

High responsivity Si-based near-infrared photodetector with surface microstructure

Yu-Ling TANG, Shao-Jie XIA, and Jun CHEN*
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    Figures & Tables(6)
    device structure diagram (a) two-dimensional cross-sectional view, and (b) three-dimensional perspective view:(a) (b)
    surface morphology view of a device etched with microcolumn array under SEM (a) top view, and (b) side view
    surface reflectivity of three devices flat silicon, with microcolumn array etched on the surface and Al2O3 grown on the microcolumns
    the I-V curve of the device bias voltage of -5∽5 V and under 808 nm illumination with different intensities (a) the original silicon-based photodetector, (b) the silicon-based photodetector with microcolumn array etched on the surface, and (c) the silicon-based photodetector with Al2O3 grown on the microcolumn
    comparison of photocurrent of three devices under 0.1 mW incident light intensity
    comparison of light responsivity of three kinds of devices under the same illumination intensity and bias at 808 nm wavelength
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    Yu-Ling TANG, Shao-Jie XIA, Jun CHEN. High responsivity Si-based near-infrared photodetector with surface microstructure[J]. Journal of Infrared and Millimeter Waves, 2020, 39(4): 417

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    Paper Information

    Category: Materials and Devices

    Received: Dec. 8, 2019

    Accepted: --

    Published Online: Sep. 17, 2020

    The Author Email: Jun CHEN (junchen@suda.edu.cn)

    DOI:10.11972/j.issn.1001-9014.2020.04.004

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