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Journal of Infrared and Millimeter Waves, Volume. 43, Issue 4, 520(2024)

An improved ASM-HEMT model for kink effect on GaN devices

Shuai WANG1,2, Ai-Qiang CHENG2, Chen GE2, Dun-Jun CHEN1、*, Jun LIU3, and Da-Zhi DING4
Author Affiliations
  • 1Department of Electronic Science and Engineering，Nanjing University，Nanjing 210033，China
  • 2Nanjing Electronic Devices Institute，Nanjing 210016，China
  • 3Department of Electronic Information，Hangzhou Dianzi University，Hangzhou 310018，China
  • 4Department of microelectronics，Nanjing University of Science and Technology，Nanjing 210094，China
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    [1] U K Mishra, L Shen, T E Kazior et al. GaN-based RF power devices and amplifiers. Proceedings of the IEEE, 96, 287-305(2008).

    [2] S Ma, J Liu, J Wang et al. Comparison of two standard physical models of GaN HEMTs: MVSG and ASM, 1-3(2021).

    [3] S Ghosh, K Sharma, S Agnihotri et al. Modeling of temperature effects in a surface-potential based ASM-HEMT model, 1-4(2014).

    [4] S Khandelwal, Y S Chauhan, T A Fjeldly et al. ASM GaN: Industry standard model for GaN RF and power devices—Part 1: DC, CV, and RF model. IEEE Transactions on Electron Devices, 66, 80-86(2019).

    [5] N C Miller, N A Moser, R C Fitch et al. Accurate nonlinear GaN HEMT simulations from X- to Ka-Band using a single ASM-HEMT model, 1-4(2021).

    [6] K Kellogg, S Khandelwal, N Craig et al. Improved charge modeling of field-plate enhanced AlGaN/GaN HEMT devices using a physics based compact model, 102-105(2018).

    [7] G Meneghesso, F Zanon, M J Uren et al. Anomalous kink effect in GaN high electron mobility transistors. IEEE Electron Device Letters, 30, 100-102(2009).

    [8] Meng-Yi CAO, Yang LU, Jia-Xing WEI et al. An improved EEHEMT model for kink effect on AlGaN/GaN HEMT. Chinese Physics B, 23, 452-456(2014).

    [9] Li-Hua FU, Hai LU, Dun-Jun CHEN, at al. Field-dependent carrier trapping induced kink effect in AlGaN/GaN high electron mobility transistors. Applied Physics Letters, 98(2011).

    [10] S Khandelwal, Y S Chauhan, T A Fjeldly. Analytical modeling of surface-potential and intrinsic charges in AlGaN/GaN HEMT devices. IEEE Transactions on Electron Devices, 59, 2856-2860(2012).

    [11] S Ghosh, S A Ahsan, A Dasgupta et al. GaN HEMT modeling for power and RF applications using ASM-HEMT, 1-4(2016).

    [12] A Dasgupta, S Ghosh, Y S Chauhan et al. ASM-HEMT: Compact model for GaN HEMTs, 495-498(2015).

    [13] W R Curtice, M Ettenberg. A nonlinear GaAs FET model for use in the design of output circuits for power amplifiers. IEEE Transactions on Microwave Theory and Techniques, 33, 1383-1394(1985).

    [14] RP Khade, S Sarkar, A DasGupta et al. Origin of the kink effect in AlInN/GaN high electron-mobility transistor. Journal of Applied Physics, 130, 205707(2021).

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    Shuai WANG, Ai-Qiang CHENG, Chen GE, Dun-Jun CHEN, Jun LIU, Da-Zhi DING. An improved ASM-HEMT model for kink effect on GaN devices[J]. Journal of Infrared and Millimeter Waves, 2024, 43(4): 520

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    Paper Information

    Category: Research Articles

    Received: Sep. 3, 2023

    Accepted: --

    Published Online: Aug. 27, 2024

    The Author Email: CHEN Dun-Jun (djchen@nju.edu.cn)

    DOI:10.11972/j.issn.1001-9014.2024.04.011

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology