Journal of Infrared and Millimeter Waves, Volume. 43, Issue 4, 520(2024)
An improved ASM-HEMT model for kink effect on GaN devices
Figures & Tables(13)
Fig. 1. Current collapse and kink effect in the output characteristics
Fig. 2. Photographs of D-mode GaN HEMTs: (a) the 1.2-mm-wide device;(b) the 0.4-mm-wide device
Fig. 4. The fitting result of the output characteristics Ids-Vds
Fig. 5. The fitting result of the output characteristics Ids-Vds for the 0.4-mm-wide device: (a) Vds ranges from 0 V to 36 V; (b) Vds ranges from 0 V to 10 V
Fig. 6. The fitting result of the S-parameter: (a) the 1.2-mm-wide device; (b) the 0.4-mm-wide device
Fig. 8. The fitting result of the transfer characteristics Ids-Vgs
Fig. 11. Simulated and measured Pout for the maximum power matching and PAE for the maximum efficiency matching
Table 1. The extracted parameters related to the current collapse and kink effect for the 1.2-mm-wide device
View tableView in ArticleTable 1. The extracted parameters related to the current collapse and kink effect for the 1.2-mm-wide device
The fitting parameter d0 d1 g0 g1 g2 g3 g4 Value 5.234 m 10 2.506 18.15 m 69.02 m 218.3 m 151.4 m
Table 2. The extracted parameters related to the current collapse and kink effect for the 0.4-mm-wide device
View tableView in ArticleTable 2. The extracted parameters related to the current collapse and kink effect for the 0.4-mm-wide device
The fitting parameter d0 d1 g0 g1 g2 g3 g4 Value 21.83 m 3.793 3.282 477.5 m 584.2 m 0.001 m 3.451 m
Tools
Get Citation
Copy Citation Text
Shuai WANG, Ai-Qiang CHENG, Chen GE, Dun-Jun CHEN, Jun LIU, Da-Zhi DING. An improved ASM-HEMT model for kink effect on GaN devices[J]. Journal of Infrared and Millimeter Waves, 2024, 43(4): 520
Paper Information
Category: Research Articles
Received: Sep. 3, 2023
Accepted: --
Published Online: Aug. 27, 2024
The Author Email: Dun-Jun CHEN (djchen@nju.edu.cn)
© Copyright 2018-2021 | Chinese Laser Press.
All Rights Reserved 沪ICP备15018463号-20