Journal of Semiconductors, Volume. 40, Issue 7, 071903(2019)
Review on the quantum emitters in two-dimensional materials
Fig. 1. (Color online) (a) Photoluminescence (PL) intensity map of narrow emission lines centered at 1.719 eV. The dashed triangle indicates the position of the monolayer WSe2[
Fig. 2. (Color online) (a) Optical microscope image of a typical device used in experiments. The dotted lines highlight the footprint of the graphene, hBN and the TMD layers individually. The Cr/Au electrodes contact the graphene and TMD layers to provide electrical bias[
Fig. 3. (Color online) (a) Scanning electron microscope (SEM) image of nanopillar substrate, fabricated by electron beam lithography[
Fig. 4. (Color online) (a) Optical image of the monolayer WSe2/hBN stack. The dashed square indicates the scanning area in the PL mapping measurements[
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Shuliang Ren, Qinghai Tan, Jun Zhang. Review on the quantum emitters in two-dimensional materials[J]. Journal of Semiconductors, 2019, 40(7): 071903
Category: Reviews
Received: Apr. 30, 2019
Accepted: --
Published Online: Sep. 18, 2021
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