[1] [1] Z. D. Sha, X. M. Wu, L. J. Zhuge. Structure and photoluminescence properties of SiC films synthesized by the RF-magnetron sputtering technique [J]. Vacuum, 2005, 79:250～254

[2] [2] Chen Xiaping, Zhu Huili, Cai Jiafa et al.. High-performance 4H-SiC based ultraviolet p-i-n photodetector [J]. J. Appl. Phys., 2007, 102(2):024505

[3] [3] M. Mehregany, C A. Zorman. SiC MEMS: opportunities and challenges for applications in harsh environments [J]. Thin Solid Films, 1999, 355:518～524

[4] [4] B. Garcia, M. Estrada, F. Cruz-Gandarilla et al.. Differences in the laser annealing of a-Si∶H and a-SiC films [C]. Proceedings of the Fifth IEEE International Caracas Conference on Devices, Circuits and Systems, 2004, 1:164～167

[5] [5] Zhang Haixia, Guo Hui, Luo Rui et al.. In-situ doped and laser annealing of PECVD SiC thin film [C]. Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, 2007, 1:33～36

[6] [6] G. De Cesare, S. La Monica, G. Maiello. Crystallization of amorphous silicon carbide thin films by laser treatment [J]. Surface and Coatings Technology, 1996, 80:237～241

[7] [7] N. I. Cho, Y. M. Kima, J. S. Lim et al.. Laser annealing effect of SiC films prepared by PECVD (plasma enhanced chemical vapor deposition) [J]. Thin Solid Films, 2002, 409:1～7

[8] [8] G. De Cesare, S. La Monica, G. Maiello. Crystallization of silicon carbide thin films by pulsed laser irradiation [J]. Applied Surface Science, 1996, 106:193～197

[9] [9] Yuan Yonghua, Liu Songhao, Sun Chengwei et al..Study of the characteristics of the surface ripple on Si material irradiated by pulsed laser [J]. Acta Optica Sinica, 2004, 24(2):239～242

[10] [10] C. Summonte, R. Rizzoli, M. Servidori et al.. Laser induced crystallization of hydrogenated amorphous silicon-carbon alloys [J]. J. Appl. Phys., 2004, 96(7):3998～4005

[11] [11] J. Huran, I. Hotovy, J. Pezoltd et al.. Effect of deposition temperature on the properties of amorphous silicon carbide thin films [J]. Thin Solid Films, 2006, 515:651～653

[12] [12] S. P. Lau, J. M. Marshall, T. E. Dyer et al.. Structural and electrical transport properties of excimer (ArF)-laser-crystallized silicon carbide [J]. Phil. Mag. B, 1995, 72:323～333

[13] [13] Wu Xiaojun, Jia Tianqing, Zhao Fuli et al.. Fabrication of nanostructures on 6H-SiC crystal induced by femtosecond laser [J]. Acta Optica Sinica, 2007, 27(1):105～110

[14] [14] A. R. Oliveira, I. Pereyra, M. N. P. Carreňo. Structural and electrical properties of low-temperature PECVD SiC/c-Si heterostructures [J]. Materials Science and Engineering B, 2004, 112:144～146