[1] [1] FLEETWOOD D M. Evolution of total ionizing dose effects in MOS devices with Moore's law scaling[J]. IEEE Transactions on Nuclear Science, 2017,65(8):1465-1481.

[2] [2] MANIKANTHABABU N,BASU T,VAJANDAR S,et al. Radiation tolerance,charge trapping and defect dynamics studies of ALD-grown Al/HfO2/Si nMOSCAPs[J]. Journal of Materials Science:Materials in Electronics, 2020,31(4):3312-3322.

[3] [3] KAHRAMAN A,DEEVI S C,YILMAZ E. Influence of frequency and gamma irradiation on the electrical characteristics of Er2O3, Gd2O3,Yb2O3,and HfO2 MOS-based devices[J]. Journal of Materials Science, 2020,55(81):7999-8040.

[4] [4] FLEETWOOD D M. Total-ionizing-dose effects,border traps,and 1/f noise in emerging MOS technologies[J]. IEEE Transactions on Nuclear Science, 2020,67(7):1216-1240.

[5] [5] LIU Zhongli. Development of nano scale CMOS integrated circuit and its radiation effects[J]. Journal of Terahertz Science and Electronic Information Technology, 2016,14(6):953-960.

[6] [6] OLDHAM T R,MCLEAN F B. Total ionizing dose effects in MOS oxides and devices[J]. IEEE Transactions on Nuclear Science, 2003,50(3):483-499.

[7] [7] SONG Zhaorui,CHENG Xinhong,ZHANG Enxia,et al. Influence of preparing process on total.dose radiation response of high.k Hf-based gate dielectrics[J]. Thin Solid Films, 2008,517(1):465-467.

[8] [8] ZHAO C Z,TAYLOR S,WERNER M,et al. High-k materials and their response to gamma-ray radiation[J]. Journal of Vacuum Science & Technology B, 2009,27(1):411-415.

[9] [9] HAO Yue, LIU Hongxia. Reliability and failure mechanism of micro nano MOS devices[M]. Beijing:Science Press, 2008.

[10] [10] PARK K, IM S, PARK K, et al. Reliability analysis framework for time-dependent dielectric breakdown[J]. Journal of Semiconductor Technology and Science, 2020,20(1):19-28.

[11] [11] SILVESTRI M,GERARDIN S,SCHRIMPF R D,et al. The role of irradiation bias on the time-dependent dielectric breakdown of 130 nm MOSFETs exposed to X-rays[J]. IEEE Transactions on Nuclear Science, 2009,56(6):3244-3249.

[12] [12] MA T,YU X,CUI J,et al. Investigating the TDDB lifetime growth mechanism caused by proton irradiation in partially depleted SOI devices[J]. Microelectronics Reliability, 2018(81):112-116.