Investigation of the effect of total ionization dose on time-dependent dielectric breakdown for HfO<sub>2</sub>-based gate dielectrics

WEI Ying; CUI Jiangwei; PU Xiaojuan; CUI Xu; LIANG Xiaowen; WANG Jia; GUO Qi

doi:10.11805/tkyda2022007

Journal of Terahertz Science and Electronic Information Technology , Volume. 20, Issue 9, 903(2022)

Investigation of the effect of total ionization dose on time-dependent dielectric breakdown for HfO₂-based gate dielectrics

WEI Ying^1,2,3、*, CUI Jiangwei^1,2,3, PU Xiaojuan^1,2,3, CUI Xu^1,2,3, LIANG Xiaowen^1,2,3, WANG Jia^1,2, and GUO Qi^1,2,3

Author Affiliations

¹[in Chinese]

²[in Chinese]

³[in Chinese]

show less

Figures & Tables(0)

Tools

Get Citation

Copy Citation Text

WEI Ying, CUI Jiangwei, PU Xiaojuan, CUI Xu, LIANG Xiaowen, WANG Jia, GUO Qi. Investigation of the effect of total ionization dose on time-dependent dielectric breakdown for HfO₂-based gate dielectrics[J]. Journal of Terahertz Science and Electronic Information Technology , 2022, 20(9): 903

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category:

Received: Jan. 5, 2022

Accepted: --

Published Online: Oct. 28, 2022

The Author Email: Ying WEI (weiying@ms.xjb.ac.cn)

DOI:10.11805/tkyda2022007

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology