Photonics Research, Volume. 13, Issue 5, 1313(2025)

Advancing photonic device capabilities via femtosecond laser modification of LPCVD-SiN microring resonator characteristics

Jia Du1, Weixiao Xu1,2,3, Runwei Zhou1,2, Xiao Chen1, Ting Li1, Xiongping Bao1,2, Hong Wang1,4, Weibiao Chen1,2,3, and Libing Zhou1,2、*
Author Affiliations
  • 1Wangzhijiang Innovation Center for Laser, Aerospace Laser Technology and System Department, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
  • 4Department of Optics and Optical Engineering, University of Science and Technology of China, Hefei 230026, China
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    Figures & Tables(6)
    (a) Relationship between waveguide width and effective refractive indices of propagating modes in SiN waveguides at a wavelength of 1550 nm. (b) Bending loss at 90° angle with respect to the bend radius. (c) Cross-sectional view of SiN waveguides. (d) SEM image of as-fabricated SiN-MRRs.
    (a) Coupling measurement platform for samples; (b) schematic illustration of femtosecond laser processing setup; (c) ultrathin nanosheets fabricated based on multilayer SiN-MRR configuration.
    (a) Low-magnification TEM image with the corresponding selected-area electron-diffraction pattern; (b) enlarged view of area shown in (a); (c) TEM-EDS elemental mappings and spectra of laser-modified SiN layer; (d) region A in (b) with the corresponding FFT pattern; (e) region B in (b) with the corresponding HRTEM image; (f) TEM-EDS elemental mappings and spectra of as-fabricated SiN waveguides.
    (a) Variation in transmission spectra of 10 SiN-MRRs at different locations on an 8-inch wafer; (b) variations in resonance wavelength of SiN-MRRs subjected to various laser energy, with the corresponding first trimming at a laser energy of 2.1 nJ depicted in the inset; (c) parameters a and t representing the coupling regimes of SiN-MRRs before and after laser modification, along with the corresponding transmission spectra within the C-band; (d) performance variations of SiN-MRRs before and after the second laser modification at a laser energy of 2 nJ.
    (a) Normalized resonance spectra of second-order MRRs after femtosecond laser manipulation; (b) normalized resonance spectra of upper MRR after two iterations of femtosecond laser manipulation. In the inset, 1st-T and 2nd-T refer to first and second trimmings, respectively.
    (a) Comparison of passband characteristics of filters comprising first- and second-order MRRs; (b) simulation results of second-order MRR-based four-channel WDM; (c) schematic representation of second-order MRR filters. (d) SEM image of as-fabricated four-channel WDM; spectra of second-order MRR-based four-channel WDM (e) before and (f) after femtosecond laser tuning.
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    Jia Du, Weixiao Xu, Runwei Zhou, Xiao Chen, Ting Li, Xiongping Bao, Hong Wang, Weibiao Chen, Libing Zhou, "Advancing photonic device capabilities via femtosecond laser modification of LPCVD-SiN microring resonator characteristics," Photonics Res. 13, 1313 (2025)

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    Paper Information

    Category: Optical and Photonic Materials

    Received: Nov. 26, 2024

    Accepted: Mar. 1, 2025

    Published Online: Apr. 30, 2025

    The Author Email: Libing Zhou (lbzhou@siom.ac.cn)

    DOI:10.1364/PRJ.550226

    CSTR:32188.14.PRJ.550226

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