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Acta Optica Sinica, Volume. 40, Issue 4, 422002(2020)

Multi-Parameter Joint Optimization for Lithography Based on Photoresist Topography Model

Mao Yanjie1,2, Li Sikun1,2, Wang Xiangzhao1,2, Wei Yayi3, and Chen Guodong1,2
Author Affiliations
  • 1Laboratory of Information Optics and Opto-Electronic Technology, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3Integrated Circuit Advanced Process R & D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
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    AbstractGet PDF(in Chinese)
    Figures&Tables (21)
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    References (30)
    Cited By (3)
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    Figures & Tables(21)
    Schematic of lithographic projection system

    Fig. 1. Schematic of lithographic projection system

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    Coding scheme of source and mask. (a) Coding scheme of source; (b) coding scheme of mask

    Fig. 2. Coding scheme of source and mask. (a) Coding scheme of source; (b) coding scheme of mask

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    Illustration of the JADE mutation strategy

    Fig. 3. Illustration of the JADE mutation strategy

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    Workflow of proposed method. (a) General flow chart; (b) source or mask optimization; (c) selection operation; (d) evaluation function calculation

    Fig. 4. Workflow of proposed method. (a) General flow chart; (b) source or mask optimization; (c) selection operation; (d) evaluation function calculation

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    Initial status of objects to be optimized. (a) Mask; (b) source; (c) projector pupil

    Fig. 5. Initial status of objects to be optimized. (a) Mask; (b) source; (c) projector pupil

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    Mask, source and projector pupil after optimization by proposed method. (a) Mask; (b) source; (c) projector pupil

    Fig. 6. Mask, source and projector pupil after optimization by proposed method. (a) Mask; (b) source; (c) projector pupil

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    Mask, source, and projector pupil after optimization by SMPO-AI. (a) Mask; (b) source; (c) projector pupil

    Fig. 7. Mask, source, and projector pupil after optimization by SMPO-AI. (a) Mask; (b) source; (c) projector pupil

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    Intensity distributions on photoresist top surface. (a) Before optimization; (b) after optimization by SMPO-AI; (c) after optimization by proposed method

    Fig. 8. Intensity distributions on photoresist top surface. (a) Before optimization; (b) after optimization by SMPO-AI; (c) after optimization by proposed method

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    Surface profiles of photoresist. (a) Before optimization; (b) after optimization by SMPO-AI; (c) after optimization by proposed method

    Fig. 9. Surface profiles of photoresist. (a) Before optimization; (b) after optimization by SMPO-AI; (c) after optimization by proposed method

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    Sectional profiles of photoresist. (a) Before optimization; (b) after optimization by SMPO-AI; (c) after optimization by proposed method

    Fig. 10. Sectional profiles of photoresist. (a) Before optimization; (b) after optimization by SMPO-AI; (c) after optimization by proposed method

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    Convergence curves of two methods. (a) SMPO-AI; (b) proposed method

    Fig. 11. Convergence curves of two methods. (a) SMPO-AI; (b) proposed method

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    Convergence curves of two methods

    Fig. 12. Convergence curves of two methods

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    Process window before and after optimization. (a) Process window; (b) exposure latitude versus depth of focus

    Fig. 13. Process window before and after optimization. (a) Process window; (b) exposure latitude versus depth of focus

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    Optimization results of complex pattern. (a) Target pattern; (b) optimized mask; (c) optimized source; profiles of photoresist (d) before optimization and (e) after optimization; (f) optimized projector pupil

    Fig. 14. Optimization results of complex pattern. (a) Target pattern; (b) optimized mask; (c) optimized source; profiles of photoresist (d) before optimization and (e) after optimization; (f) optimized projector pupil

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    Sectional diagrams of photoresist morphology before and after optimization of complex pattern. (a) Before optimization; (b) after optimization

    Fig. 15. Sectional diagrams of photoresist morphology before and after optimization of complex pattern. (a) Before optimization; (b) after optimization

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    Photoresist morphology after optimization of complex pattern

    Fig. 16. Photoresist morphology after optimization of complex pattern

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    Process window after optimization of complex pattern. (a) Process window; (b) exposure latitude versus depth of focus

    Fig. 17. Process window after optimization of complex pattern. (a) Process window; (b) exposure latitude versus depth of focus

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    Optimization results of SRAM pattern. (a) Target pattern; (b) optimized mask; (c) optimized source; profiles of photoresist (d) before optimization and (e) after optimization; (f) optimized projector pupil

    Fig. 18. Optimization results of SRAM pattern. (a) Target pattern; (b) optimized mask; (c) optimized source; profiles of photoresist (d) before optimization and (e) after optimization; (f) optimized projector pupil

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    Process window after optimization of SRAM pattern. (a) Process window; (b) exposure latitude versus depth of focus

    Fig. 19. Process window after optimization of SRAM pattern. (a) Process window; (b) exposure latitude versus depth of focus

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    • Table 1. Photoresist stack data

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      Table 1. Photoresist stack data

      LayerMediumnkThickness /nm
      1Resist1.7190.364394.5
      2SiARC1.640.1532.0
      3SOC1.490.3200
      4Substrate0.8832.778+∞

    • Table 2. Process window before and after optimization

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      Table 2. Process window before and after optimization

      Process windowMax DOF /nmMax EL /%Max PWPW area /%
      EL /%DOF /nm
      Initial141.56.44.2584.0100.0
      SMPO-AI212.512.858.65122.0298.3
      Proposed method237.018.0511.2138.0441.7
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    Mao Yanjie, Li Sikun, Wang Xiangzhao, Wei Yayi, Chen Guodong. Multi-Parameter Joint Optimization for Lithography Based on Photoresist Topography Model[J]. Acta Optica Sinica, 2020, 40(4): 422002

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    Paper Information

    Category: Optical Design and Fabrication

    Received: Sep. 16, 2019

    Accepted: --

    Published Online: Feb. 11, 2020

    The Author Email:

    DOI:10.3788/AOS202040.0422002

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology