Infrared and Laser Engineering, Volume. 51, Issue 8, 20210721(2022)

Research on the package structure of deep low-temperature and high-power resistor array

Quan Sun1,2,3, Defeng Mo1,2, Dafu Liu1,2, and Haimei Gong1,2
Author Affiliations
  • 1State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
  • 2Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
  • 3University of Chinese Academy of Sciences, Beijing 100049, China
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    Figures & Tables(11)
    Schematic diagram of simplified model of package module
    Schematic diagram of (a) resistor array package structure, (b) distribution of temperature measurement points and (c) Ceramic heater structure
    Relationship between the temperature of the package structure and the thickness of the molybdenum (a) and copper (b) heat sink; Relationship between the thermal stress of the package structure and the thickness of the molybdenum (c) and copper (d) heat sink
    Diagrams between the temperature distribution of 1 mm (a), 2 mm (b) and 3 mm (c) molybdenum heat sink package structure and the thickness of the ceramic electrode plate; Diagrams between the thermal stress of 1 mm (d), 2 mm (e) and 3 mm (f) molybdenum heat sink package structure and the thickness of the ceramic electrode plate
    Diagram of temperature distribution of physical experiment and simulation analysis and heating power
    Temperature distribution diagram of ceramic heater model under 100 W heating power
    Diagram between the ratio of ceramic heater area which surface temperature is less than 130 K and the heating power
    Diagram between the heating time of 87.85-128.52 W heating power and the temperature of each temperature measurement point
    • Table 1. Comparison of package structure alternative material parameters (100 K)

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      Table 1. Comparison of package structure alternative material parameters (100 K)

      Materialsλ/W·(m·K)−1α/10−6E/GPa μ
      Mo1742.693200.3
      Cu48316.71400.34
      Ceramic4.56.73600.26
      304L9.29.162000.3
      4J297.62.091400.37
      Si1242.491120.28
      Sapphire27.28.403450.29
    • Table 2. Relationship between the temperature of the main parts of the package structure and the material and thickness of the heat sink

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      Table 2. Relationship between the temperature of the main parts of the package structure and the material and thickness of the heat sink

      Material of heat sink Heat sink thickness/mm Temperature distribution/K
      Heat sinkCeramicChip substrateHeater
      Mo180.6491.1497.6097.82
      281.2891.7898.2498.46
      381.9292.4298.8899.10
      Cu180.2390.7397.1997.41
      280.4690.9697.4297.64
      380.6991.1997.6597.87
    • Table 3. Thermal resistance of different power at each temperature measurement point of ceramic heater

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      Table 3. Thermal resistance of different power at each temperature measurement point of ceramic heater

      Temperature measuring pointThermal resistance/K·W−1
      0– 107.60 W 107.6– 192.72 W 192.72– 211.90 W Simulation results
      A0.3470.3380.6410.356
      B0.4400.5120.9180.403
      C0.3660.3730.5440.336
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    Quan Sun, Defeng Mo, Dafu Liu, Haimei Gong. Research on the package structure of deep low-temperature and high-power resistor array[J]. Infrared and Laser Engineering, 2022, 51(8): 20210721

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    Paper Information

    Category: Optical devices

    Received: Oct. 8, 2021

    Accepted: --

    Published Online: Jan. 9, 2023

    The Author Email:

    DOI:10.3788/IRLA20210721

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