AEROSPACE SHANGHAI, Volume. 42, Issue 4, 16(2025)

Ultra-wide Bandgap β-Ga2O3 Devices:A Review of High-efficiency Innovations in Aerospace Power Electronics and Challenges in Extreme Environments

Yuan LI1、*, Yue HAO1, Yuanfu ZHAO2, Xiaohua MA1, Xuefeng ZHENG1, Danning TANG1, Weibo JIANG1, Chenyang NIU1, and Xinyue LI1
Author Affiliations
  • 1National Engineering Research Center of Wide Band-gap Semiconductor,Faculty of Integrated Circuit,Xidian University,Xi’an710071,,China
  • 2China Academy of Aerospace Electronics Technology,Beijing100094,China
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    Yuan LI, Yue HAO, Yuanfu ZHAO, Xiaohua MA, Xuefeng ZHENG, Danning TANG, Weibo JIANG, Chenyang NIU, Xinyue LI. Ultra-wide Bandgap β-Ga2O3 Devices:A Review of High-efficiency Innovations in Aerospace Power Electronics and Challenges in Extreme Environments[J]. AEROSPACE SHANGHAI, 2025, 42(4): 16

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    Paper Information

    Category: Special Paper of Expert

    Received: May. 30, 2025

    Accepted: --

    Published Online: Sep. 29, 2025

    The Author Email:

    DOI:10.19328/j.cnki.2096-8655.2025.04.002

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