Fig. 1. Characteristics of UID β-Ga₂O₃ single crystal before and after total ionizing dose radiation^［17］

Fig. 2. Material characteristics of HVPE-Grownβ-Ga₂O₃ before and after total ionizing dose radiation^［18］

Fig. 3. Structure and electrical characteristic curves of β-Ga₂O₃ Schottky diode before and after radiation^［19］

Fig. 4. Structure and forward I-V characteristic curves of β-Ga₂O₃ Schottky diode before and after radiation^［20］

Fig. 5. Electrical characteristic curves of β-Ga₂O₃ Schottky diode before and after radiation^［20］

Fig. 6. Structural and electrical characteristic curves of β-Ga₂O₃ Schottky diode before and after radiation^［21］

Fig. 7. Structural and electrical characteristic curves of Ga₂O₃ MOSFET before and after radiation^［22］

Fig. 8. Structural and electrical characteristic curves of HfO₂/β-Ga₂O₃ MOSCAP before and after radiation^［23］

Fig. 9. Electrical paramagnetic resonance characteristics of Defects 1 and 2 induced by proton radiation in Ga₂O₃ materials^［24］

Fig. 10. Variations of materials before and after 80 MeV high-energy proton radiation^［25］

Fig. 11. Properties of HVPE-grown β-Ga₂O₃ material before and after proton radiation^［26］

Fig. 12. Effects of radiation damage on the electronic properties of β-Ga₂O₃ materials based on first-principles calculation^［27］

Fig. 13. Effects of 300 MeV proton radiation on the electrical properties of β-Ga₂O₃ SBD^［28］

Fig. 14. Electrical characteristics of NiO/β-Ga₂O₃ heterojunction diodes under 17 MeV proton radiation^［29］

Fig. 15. Effects of 1.8 MeV proton irradiation on the electrical property changes of （010） β-Ga₂O₃ SBD devices grown by MOCVD^［30］

Fig. 16. Output and transfer characteristics of the β-Ga₂O₃ FET before and after 10 MeV proton irradiation with different fluences

Fig. 17. Output and transfer characteristics of the β-Ga₂O₃ FET under different annealing conditions after 10 MeV proton irradiation with a fluence of 1×10¹⁵p/cm²

Fig. 18. Ionization damage mechanism in β-Ga₂O₃ materials induced by gamma-ray radiation：formation of oxygen-vacancy-like defect levels via Ga⁺-surrounding electron ionization

Fig. 19. Displacement damage mechanism in β-Ga₂O₃ MOSFETs induced by 5 MeV proton radiation：carrier removal，oxygen vacancy increase，gallium vacancy decrease，and MOS oxide charge accumulation