The aerospace industry is at the forefront of significant technological advancements，as it adopts emerging solutions for power conversion based on ultra-wide bandgap semiconductor devices to meet the escalating demands for improved efficiency，reduced weight，and enhanced thermal performance in aerospace power electronics applications.On one hand，β-Ga₂O₃ has emerged as a promising candidate for high-efficiency，high-power-density power electronics applications，owing to its large bandgap and rapid development speed in semiconductor devices.On the other hand，the reliability evaluation and applications of β-Ga₂O₃ devices in extreme aerospace environments still face numerous unknowns and challenges.This paper thoroughly explores the pressing demand for ultra-wide bandgap semiconductor devices in aerospace power electronics，and offers an in-depth review of the global research progress on the radiation effects in gallium oxide power devices.It is believed that conducting comprehensive studies on radiation-induced defect targets and their associated signal transduction mechanisms within β-Ga₂O₃ material-device systems not only can advance a robust，closed-loop methodology for evaluating radiation reliability in ultra-wide bandgap compound semiconductors spanning from materials to devices，but also can establish a critical database linking radiation exposure conditions to quantitative device degradation metrics.Ultimately，this research provides pivotal insights for optimizing material growth，designing forward radiation-hardened power devices，and strengthening redundancy-based strategies for device-integrated power electronics systems.