Fig. 1. LTPO integrated structure

Fig. 2. （a） Optical image of the circuit； （b） Cross section of the prepared LTPO TFT； （c） Transfer and output characteristics of p-type LTPS （Red） and n-type oxide TFT （Blue）^［16］.

Fig. 3. Schematic diagram of 12T2C circuit of mini LED pixel ^［21］

Fig. 4. LTPO integration mode based on MOS TFT with different structures. （a） Reverse stacked structure MOS TFT； （b） Coplanar junction construct MOS TFT ^［11］.

Fig. 5. Physical models related to the contents of H and V_O and corresponding physical mechanisms^［28］

Fig. 6. Distribution of silicon， oxygen and hydrogen in SiO₂/IGZO/SiO₂ structure before and after annealing^［33］.

Fig. 7. Experiment and calculation of infrared spectra of a-IGZO thin film. （a） Measured infrared transmittance （T） and reflectance （R） spectra of a self-standing a-IGZO thin film； （b， c） Absorption coefficients （α） calculated from the observed transmittance and reflectance spectra. Orange and red lines indicate the calculated infrared spectra of H-free a-IGZO and hydrogen-containing a-IGZO （a-IGZO∶H）^［28］.

Fig. 8. ERD and RBS measurement results used to quantify the total hydrogen content in a-ITZO thin films. （a~d） ERD data of total hydrogen in a-ITZO membrane as a function of thermal dehydrogenation temperature； （e） Hydrogen ratio and amount of each a-ITZO membrane； （f） Comparison of RBS data of peak shift of cationic metal under thermal dehydrogenation treatment ^［27］.

Fig. 9. （a） SIMS depth profile results of hydrogen； （b） ATR-FTIR spectrum； （c） Dielectric constant （k） curves of ALD-Al₂O₃ layers with T_dep = 150 ℃ （high hydrogen， HH） and T_dep =300 ℃ （low hydrogen， LH）^［37］.

Fig. 10. Elements （a） H and （b） OH in Al₂O₃/SiO₂/IZO stack observed by SIMS^［40］

Fig. 11. （a） SIMS depth distribution of In， Zn， Ga and Si on IGZO and IGZO∶F stacks after exposure to H； （b） SIMS depth profile of H and F passing through IGZO or IGZO∶F in the same stack^［46］.

Fig. 12. Schematic diagram of the mechanism of a-IGZO TFT before and after hydrogen plasma treatment^［48］

Fig. 13. （a） LTPO inverter layout with side-by-side and （b） MOOS structure. Cross section along （c） A-A' and （d） B-B'^［49］.