Fig. 1. Schematic structure of high indium InGaAs materials

Fig. 2. (a) PL spectra at RT, and (b) XRD scan curve of sample E

Fig. 3. (a)PL intensity and (b)XRD FWHM and XRD peak intensity ratio (layer/substrate) as a function of growth temperatures

Fig. 4. Background carrier concentration and mobility as a function of growth temperatures of In_0.74Ga_0.26As layers

Fig. 5. (a)PL intensity and (b)XRD FWHM and XRD peak intensity ratio (layer/substrate) as a function of V/III ratios

Fig. 6. Background carrier concentration and mobility as a function of V/III ratios

Fig. 7. (a)PL intensity and (b)XRD FWHM and XRD peak intensity ratio (layer/substrate) as a function of arsenic dimers

Fig. 8. Background carrier concentration and mobility as a function of arsenic dimers