Journal of Infrared and Millimeter Waves, Volume. 41, Issue 6, 987(2022)

Study on Molecular Beam Epitaxy of High indium InGaAs Films

Ying YANG1,2, Hong-Zhen WANG2, Liu-Yan FAN3, Ping-Ping CHEN3, Bo-Wen LIU2, Xun-Jun HE1、*, Yi GU2、**, Ying-Jie MA2, Tao LI2, Xiu-Mei SHAO2, and Xue LI2
Author Affiliations
  • 1College of Science,Harbin University of Science and Technology,Harbin 150080,China
  • 2State Key Laboratories of Transducer Technology,Shanghai Institute of Technical Physics,Chinese Academy of Sciences Shanghai200083,China
  • 3State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences Shanghai200083,China
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    The effects of molecular beam epitaxy growth parameters on the properties of high indium InGaAs materials have been investigated in this paper. The growth temperature, V/III ratio and arsenic dimer of In0.74Ga0.26As materials were investigated and adjusted to optimize the peak intensity of the photo luminescence and X-ray diffraction measurements, as well as background carrier concentration and mobility. Results show that moderate growth temperatures and V/III ratios are needed for the growth to improve the lattice quality, reduce the non-radiation recombination and decrease the background impurity concentration. The In0.74Ga0.26As materials grown using As2 dimer show better material quality than those using As4 dimer. For the material grown at 570 ℃, As2 dimer and V/III ratio of 18, relatively strong photo luminescence and X-ray diffraction peak intensity have been achieved. At room temperature and 77 K, the background carrier concentrations were 6.3×1014 cm-3 and 4.0×1014 cm-3, while the mobilities were 13 400 cm2/Vs and 45 160 cm2/Vs, respectively.

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    Ying YANG, Hong-Zhen WANG, Liu-Yan FAN, Ping-Ping CHEN, Bo-Wen LIU, Xun-Jun HE, Yi GU, Ying-Jie MA, Tao LI, Xiu-Mei SHAO, Xue LI. Study on Molecular Beam Epitaxy of High indium InGaAs Films[J]. Journal of Infrared and Millimeter Waves, 2022, 41(6): 987

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    Paper Information

    Category: Research Articles

    Received: May. 5, 2022

    Accepted: --

    Published Online: Feb. 6, 2023

    The Author Email: Xun-Jun HE (hexunjun@hrbust.edu.cn), Yi GU (guyi@mail.sitp.ac.cn)

    DOI:10.11972/j.issn.1001-9014.2022.06.007

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