Journal of Infrared and Millimeter Waves, Volume. 41, Issue 6, 987(2022)
Study on Molecular Beam Epitaxy of High indium InGaAs Films
The effects of molecular beam epitaxy growth parameters on the properties of high indium InGaAs materials have been investigated in this paper. The growth temperature, V/III ratio and arsenic dimer of In0.74Ga0.26As materials were investigated and adjusted to optimize the peak intensity of the photo luminescence and X-ray diffraction measurements, as well as background carrier concentration and mobility. Results show that moderate growth temperatures and V/III ratios are needed for the growth to improve the lattice quality, reduce the non-radiation recombination and decrease the background impurity concentration. The In0.74Ga0.26As materials grown using As2 dimer show better material quality than those using As4 dimer. For the material grown at 570 ℃, As2 dimer and V/III ratio of 18, relatively strong photo luminescence and X-ray diffraction peak intensity have been achieved. At room temperature and 77 K, the background carrier concentrations were 6.3×1014 cm-3 and 4.0×1014 cm-3, while the mobilities were 13 400 cm2/Vs and 45 160 cm2/Vs, respectively.
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Ying YANG, Hong-Zhen WANG, Liu-Yan FAN, Ping-Ping CHEN, Bo-Wen LIU, Xun-Jun HE, Yi GU, Ying-Jie MA, Tao LI, Xiu-Mei SHAO, Xue LI. Study on Molecular Beam Epitaxy of High indium InGaAs Films[J]. Journal of Infrared and Millimeter Waves, 2022, 41(6): 987
Category: Research Articles
Received: May. 5, 2022
Accepted: --
Published Online: Feb. 6, 2023
The Author Email: Xun-Jun HE (hexunjun@hrbust.edu.cn), Yi GU (guyi@mail.sitp.ac.cn)