Fig. 1. Process chart of bottom gate a-IGZO

Fig. 2. I_d-V_g characteristics of TFTs with different aspect ratios before organic PI passivation

Fig. 3. I_d-V_g characteristics of organic PI passivated TFTs with different aspect ratios

Fig. 4. The characteristic degradation of the device under stress condition without passivation

Fig. 5. The characteristic degradation of the device under stress condition with PI passivation

Fig. 6. ΔV_th of a-IGZO TFT without passivation layer and with PI as passivation layer varing with stress time