Fig. 1. Influence mechanisms of diode laser lateral modes

Fig. 2. Simulated near-field distributions of different order lateral modes as a function of increased current

Fig. 3. Calculated (a) near-field and (b) far-field profiles of the lateral mode with different mode orders

Fig. 4. Schematic diagram of lateral current spreading for diode lasers utilizing (a) gain-guiding, (b) ion implantation, (c) current-blocking layers after the two-step epitaxial growth

Fig. 5. Schematic diagram of diode laser with Spatial Current-Modulated (SCM) structure

Fig. 6. Schematic diagram of broad-area diode laser with multiple lateral ridge waveguides

Fig. 7. Schematic diagram of bragg reflection waveguide laser with Ladder Like Groove Structure (LLGS)

Fig. 8. Schematic diagram of GaSb-based microstripebroad-area (MSBA) lasers

Fig. 9. Schematic diagram of GaSb based diode laser with fish bone micro structures

Fig. 10. Schematic diagram of the laser with sawtooth micro structure

Fig. 11. Schematic diagram of diode laser with arrow-trench micro structure

Fig. 12. (a) Micrograph of etched micro-holes and (b) different far-field patterns under various currents

Fig. 13. Calculated near-field profiles of the lateral modes with different orders and the loss tailoring placement

Fig. 14. (a) Schematic diagram of the loss tailoring BAL; (b)measured lateral beam quality of the structured and unstructured BALs at different currents

Fig. 15. Measured power-current-voltage characteristics of diode lasers with microstructures