Laser & Optoelectronics Progress, Volume. 56, Issue 11, 110003(2019)
Research and Development on Laser Frequency Stabilization Based on Spectral Hole-Burning Effect
Figures & Tables(7)
Fig. 2. Diagram of interaction between incident laser and spectral hole-burning. (a) Laser frequency equal to central frequency of spectral hole-burning; (b) laser frequency higher than central frequency of spectral hole-burning; (c) laser frequency lower than central frequency of spectral hole-burning
Fig. 4. Experimental setup of laser frequency stabilization based on spectral hole-burning effect
Fig. 5. Experimental setup of laser frequency stabilization based on spectral hole-burning effect with pre-stabilization on F-P cavity
Table 1. Materials for laser frequency stabilization based on spectral hole-burning effect in cryogenic rare-earth-ion-doped crystals
View tableTable 1. Materials for laser frequency stabilization based on spectral hole-burning effect in cryogenic rare-earth-ion-doped crystals
Ion Locked wavelength /nm Energy-level- transition Host material Eu3+ 580 7F0→5D0 Y2SiO5 Tm3+ 793 3H6→3H4 YAG、CaF2 Er3+ 1550 4I15/2→4I13/2 Y2SiO5 Pr3+ 606 3H4→1D2 Y2SiO5
Table 2. Research progress on laser frequency stabilization based on spectral hole-burning effect in cryogenic rare- earth-ion-doped crystals
View tableTable 2. Research progress on laser frequency stabilization based on spectral hole-burning effect in cryogenic rare- earth-ion-doped crystals
Year Team Laser Stabilization wavelength / nm Spectral Hole- burning material Result Method 1999 Montana State University, USA External cavity diode laser 798 Tm3+∶CaF2 Allandeviation of 780±120 Hz for 20-50 ms integration time Ref. [19] 2000 Montana State University, USA External cavity diode lasers 793 Tm3+∶Y3Al5O12 Stabilization to 20 Hz on 10 ms time scale Ref. [20] 2001 Montana State University, USA Diode lasers 1536 Er3+∶Y2SiO5 Allandeviation of 500 Hz for 2 ms integration time drift of 7 kHz/min over several minutes Ref. [21], [22], [23] 2002 Montana State University, USA Diode lasers 1537 Er3+∶KTP 200 Hz at 1.5 μm and independent to 20 Hz at 793 nm over 10 ms integration time Ref. [24] 2003 Montana State University, USA Diode lasers 1523 Er3+∶D2 ∶CaF2 Frequency stability of 2 kHz to 680 Hz over 20 ms to 500 s integration time Ref. [25] 2007 Lund Institute of Technology, Sweden Dye lasers 606 Pr3+∶Y2SiO5 Frequency stability of 1 kHz over 10 μs time scale together with long-term frequency drift below 1 kHz/s Ref. [17] 2007 Montana State University, USA Single-frequency diode lasers 1530.4 Er3+∶LiYF4 Allan deviation of 1.5 kHz over 0.05-50 s integration times, with laser frequency drift reduced to less than 1.4 kHz/min Ref. [26] 2011 National Institute of Standards and Technology, USA Dye lasers 580 Eu3+∶Y2SiO5 Allan deviation of ≤6×10-16 for 2 s≤ t ≤8 sintegration time Ref. [14] 2013 National Institute of Standards and Technology (NIST), USA Dye lasers 580 Eu3+∶Y2SiO5 Short-term frequency stability of 7×10-16 τ -1/2that averages down to @204 s integration time Ref. [28] 2015 National Institute of Standards and Technology (NIST), USA Dye lasers 580 Eu3+∶Y2SiO5 Fractional frequency instability of 1×10-15 τ -1/2that averages to @73 s integration time Ref. [39] 2017 PSL Research University, France External cavity diode lasers + frequency doubling in PPLN 580 Eu3+∶Y2SiO5 Fractional frequency stability of 2×10-14 from 1 to 100 s integration time Ref. [40]
Tools
Get Citation
Copy Citation Text
Lin Han, Yige Lin, Jing Yang, Yingjie Lan, Ye Li, Xiaojun Wang, Yong Bo, Qinjun Peng. Research and Development on Laser Frequency Stabilization Based on Spectral Hole-Burning Effect[J]. Laser & Optoelectronics Progress, 2019, 56(11): 110003
Paper Information
Category: Reviews
Received: Nov. 22, 2018
Accepted: Jan. 7, 2019
Published Online: Jun. 13, 2019
The Author Email: Lin Han (hanlin@mail.ipc.ac.cn)
© Copyright 2018-2021 | Chinese Laser Press.
All Rights Reserved 沪ICP备15018463号-20