Chinese Journal of Lasers, Volume. 49, Issue 7, 0703001(2022)
Solution-Processed Zirconia Dielectrics with UV/IR Annealing for Organic Film Transistor
Fig. 2. Morphologies and insulativity of zirconia film prepared with different precursor solutions (left and right insets are optical images of zirconia film without and without oleic acid, respectively)
Fig. 3. Optical performance of zirconia films prepared by different annealing processes. (a) Transmittance curves; (b) corresponding bandgap extrapolation in the Tauc plots
Fig. 4. AFM images of zirconia films annealed under different conditions. (a) Thermal annealing at 250 ℃;(b) thermal annealing at 350 ℃;(c) thermal annealing at 450 ℃;(d) UV/IR annealing
Fig. 5. XPS patterns of zirconia films annealed under different conditions. (a) Thermal annealing at 250 ℃;(b) thermal annealing at 350 ℃;(c) thermal annealing at 450 ℃;(d) UV/IR annealing
Fig. 6. Leakage current density versus electric field intensity based on MIM device
Fig. 8. Electrical performance curves of OTFT device based on zirconia dielectric film. (a) Transfer performance curves with pristine zirconia; (b) output performance curves with pristine zirconia; (c) transfer performance curves with self-assembly-treated zirconia; (d) output performance curves with self-assembly-treated zirconia
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Yingtao Xie, Kunlin Cai, Penglong Chen, Yu Liu, Dongping Wang. Solution-Processed Zirconia Dielectrics with UV/IR Annealing for Organic Film Transistor[J]. Chinese Journal of Lasers, 2022, 49(7): 0703001
Received: Aug. 20, 2021
Accepted: Sep. 30, 2021
Published Online: Mar. 2, 2022
The Author Email: Dongping Wang (vipwdp@126.com)