Chinese Journal of Lasers, Volume. 49, Issue 7, 0703001(2022)

Solution-Processed Zirconia Dielectrics with UV/IR Annealing for Organic Film Transistor

Yingtao Xie1, Kunlin Cai1, Penglong Chen1, Yu Liu1, and Dongping Wang2、*
Author Affiliations
  • 1School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
  • 2Suzhou Institute of Biomedical Engineering and Technology, Chinese Academy of Sciences, Suzhou, Jiangsu 215163, China
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    Figures & Tables(11)
    UV light intensity versus wavelength
    Morphologies and insulativity of zirconia film prepared with different precursor solutions (left and right insets are optical images of zirconia film without and without oleic acid, respectively)
    Optical performance of zirconia films prepared by different annealing processes. (a) Transmittance curves; (b) corresponding bandgap extrapolation in the Tauc plots
    AFM images of zirconia films annealed under different conditions. (a) Thermal annealing at 250 ℃;(b) thermal annealing at 350 ℃;(c) thermal annealing at 450 ℃;(d) UV/IR annealing
    XPS patterns of zirconia films annealed under different conditions. (a) Thermal annealing at 250 ℃;(b) thermal annealing at 350 ℃;(c) thermal annealing at 450 ℃;(d) UV/IR annealing
    Leakage current density versus electric field intensity based on MIM device
    Capacitance versus frequency for MIM device
    Electrical performance curves of OTFT device based on zirconia dielectric film. (a) Transfer performance curves with pristine zirconia; (b) output performance curves with pristine zirconia; (c) transfer performance curves with self-assembly-treated zirconia; (d) output performance curves with self-assembly-treated zirconia
    • Table 1. Element content (atomic percentage) of zirconia films annealed under different processes

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      Table 1. Element content (atomic percentage) of zirconia films annealed under different processes

      Annealing processAtomic fraction of element/%Ratio of O to Zr
      COZr
      Thermal annealing at 250 ℃14.0444.7440.751.09
      Thermal annealing at 350 ℃12.3546.7340.961.14
      Thermal annealing at 450 ℃8.1650.8041.041.24
      UV /IR annealing2.6254.1143.271.25
    • Table 2. Parameters of zirconia films prepared by different annealing processes

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      Table 2. Parameters of zirconia films prepared by different annealing processes

      Annealing conditionThickness /nmCapacitance /(nF·cm-2)Dielectric constant
      Thermal annealing at 250 ℃2350713.2
      Thermal annealing at 350 ℃2065014.7
      Thermal annealing at 450 ℃1694417.0
      UV /IR annealing18111222.6
    • Table 3. Electrical parameters of OTFT device based on zirconia dielectric film

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      Table 3. Electrical parameters of OTFT device based on zirconia dielectric film

      Device (W=1000 μm,L=100 μm)Mobility /(cm2·V-1·s-1)Vth /VIon/offS /(V·dec-1)
      Pristine zirconia0.21-1.081.5×1060.23
      Self-assembly-treated zirconia0.50-0.473.6×1070.16
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    Yingtao Xie, Kunlin Cai, Penglong Chen, Yu Liu, Dongping Wang. Solution-Processed Zirconia Dielectrics with UV/IR Annealing for Organic Film Transistor[J]. Chinese Journal of Lasers, 2022, 49(7): 0703001

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    Paper Information

    Received: Aug. 20, 2021

    Accepted: Sep. 30, 2021

    Published Online: Mar. 2, 2022

    The Author Email: Dongping Wang (vipwdp@126.com)

    DOI:10.3788/CJL202249.0703001

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