Chinese Optics Letters, Volume. 16, Issue 1, 011404(2018)
Stress damage process of silicon wafer under millisecond laser irradiation
Fig. 2. Real-time images induced by different laser energy densities for (a) 19 and (b)
Fig. 3. (a)–(d) Real-time images at different times. The laser energy density is
Fig. 4. Simulation model of a silicon wafer under laser irradiation.
Fig. 5. (Color online) (a) Temperature of spot center and (b) von Mises stresses along the
Fig. 6. Images just before fracture. The experiment is the same as that of Fig.
Fig. 7. (Color online) (a) Concentric circle and (b) shear stresses along it at 1.5 ms. S1, S2, and S3 represent the shear stress along (111)[110], (111)[101], and (111)[011], respectively.
Fig. 8. (a) Typical ablation morphology induced by a millisecond laser and (b) a nanosecond laser.
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Zhichao Jia, Tingzhong Zhang, Huazhong Zhu, Zewen Li, Zhonghua Shen, Jian Lu, Xiaowu Ni, "Stress damage process of silicon wafer under millisecond laser irradiation," Chin. Opt. Lett. 16, 011404 (2018)
Category: Lasers and Laser Optics
Received: Sep. 12, 2017
Accepted: Dec. 1, 2017
Published Online: Jul. 17, 2018
The Author Email: Xiaowu Ni (nxw@njust.edu.cn)