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Chinese Journal of Lasers, Volume. 46, Issue 7, 0701002(2019)

Design and Fabrication of 980 nm Distributed Bragg Reflection Semiconductor Laser with High Power

Chuang Qiao1,2, Ruigong Su2, Xiang Li2, Dan Fang1、*, Xuan Fang1, Jilong Tang1, Baoshun Zhang2, and Zhipeng Wei1
Author Affiliations
  • 1 State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, Changchun, Jilin 130022, China
  • 2 Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences,Suzhou, Jiangsu 215123, China
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    AbstractGet PDF(in Chinese)
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    References (15)
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    Relationship between grating length and reflectivity

    Fig. 1. Relationship between grating length and reflectivity

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    Structure ofridge semiconductor laser

    Fig. 2. Structure ofridge semiconductor laser

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    Production process of DBR grating. (a) Grow 200 nm-thick SiO2 by PECVD on substrate and then coat with PMMA photoresist; (b) perform electron beam lithography; (c) etch SiO2 mask layer by RIE; (d) remove photoresist and etch substrate with ICP; (e) remove residual SiO2 mask layer

    Fig. 3. Production process of DBR grating. (a) Grow 200 nm-thick SiO2 by PECVD on substrate and then coat with PMMA photoresist; (b) perform electron beam lithography; (c) etch SiO2 mask layer by RIE; (d) remove photoresist and etch substrate with ICP; (e) remove residual SiO2 mask layer

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    SEM images of DBR grating. (a) Before shape optimization; (b) after shape optimization

    Fig. 4. SEM images of DBR grating. (a) Before shape optimization; (b) after shape optimization

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    P-I-V test results

    Fig. 5. P-I-V test results

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    Spectral test results

    Fig. 6. Spectral test results

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    • Table 1. Diode-laser epitaxial layer structures

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      Table 1. Diode-laser epitaxial layer structures

      TypeComponentThickness /nmDopingcontent /cm-3
      p++GaAs4001×1020
      pAl0.2Ga0.8As10001×1018
      pAl0.1Ga0.9As11001×1018
      IAl0.13Ga0.87As10
      IInGaAs7
      IAl0.13Ga0.87As10
      IInGaAs7
      IAl0.13Ga0.87As10
      IInGaAs7
      IAl0.13Ga0.87As10
      nAl0.1Ga0.9As16001×1018
      nAl0.2Ga0.8As10001×1018
      n+GaAs2001×1018
      SubstrateGaAs

    • Table 2. ICP etching parameters

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      Table 2. ICP etching parameters

      ParameterNumerical value
      ICP power /W350
      RF power /W50
      Cl2 beam /(m3·s-1)5×10-8
      BCl3 beam /(m3·s-1)1.167×10-7
      Ar beam /(m3·s-1)2.5×10-7
      Time /min4
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    Chuang Qiao, Ruigong Su, Xiang Li, Dan Fang, Xuan Fang, Jilong Tang, Baoshun Zhang, Zhipeng Wei. Design and Fabrication of 980 nm Distributed Bragg Reflection Semiconductor Laser with High Power[J]. Chinese Journal of Lasers, 2019, 46(7): 0701002

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    Paper Information

    Category: laser devices and laser physics

    Received: Jan. 31, 2019

    Accepted: Mar. 11, 2019

    Published Online: Jul. 11, 2019

    The Author Email: Fang Dan (fangdan19822011@163.com)

    DOI:10.3788/CJL201946.0701002

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology