Design and Fabrication of 980 nm Distributed Bragg Reflection Semiconductor Laser with High Power

Chuang Qiao; Ruigong Su; Xiang Li; Dan Fang; Xuan Fang; Jilong Tang; Baoshun Zhang; Zhipeng Wei

doi:10.3788/CJL201946.0701002

Chinese Journal of Lasers, Volume. 46, Issue 7, 0701002(2019)

Design and Fabrication of 980 nm Distributed Bragg Reflection Semiconductor Laser with High Power

Chuang Qiao^1,2, Ruigong Su², Xiang Li², Dan Fang^1、*, Xuan Fang¹, Jilong Tang¹, Baoshun Zhang², and Zhipeng Wei¹

¹ State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, Changchun, Jilin 130022, China

² Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences,Suzhou, Jiangsu 215123, China

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Chuang Qiao, Ruigong Su, Xiang Li, Dan Fang, Xuan Fang, Jilong Tang, Baoshun Zhang, Zhipeng Wei. Design and Fabrication of 980 nm Distributed Bragg Reflection Semiconductor Laser with High Power[J]. Chinese Journal of Lasers, 2019, 46(7): 0701002

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Paper Information

Category: laser devices and laser physics

Received: Jan. 31, 2019

Accepted: Mar. 11, 2019

Published Online: Jul. 11, 2019

The Author Email: Fang Dan (fangdan19822011@163.com)

DOI:10.3788/CJL201946.0701002

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology