An asymmetric large optical cavity waveguide structure is designed and fabricated, and a stable output of a 980 nm high power semiconductor laser is realized by combining distributed Bragg reflection (DBR) technology. The experiments use electron beam lithography technology and an inductive coupled plasma etching process with SiO2 as a hard mask. By reducing the Ar beam current, the consumption of the SiO2 hard mask due to physical bombardment is reduced. A DBR grating with good morphology, period of 890 nm, and duty cycle of 50% is fabricated. Combined with ridge waveguide laser fabrication technology, the DBR laser is successfully fabricated. Finally, when the device injection current is 15 A, the output power is up to 10.7 W, slope efficiency is 0.73 W/A, device threshold current is 0.95 A, and central wavelength is 979.3 nm. This study presents a new approach for the fabrication and research of GaAs-based DBR semiconductor lasers.