Chinese Journal of Lasers, Volume. 51, Issue 11, 1101022(2024)
Research Progress in Laser Crystals
Fig. 2. Pr∶LaF3 crystals with different doping concentrations of Pr3+. (a) 0.5%; (b) 1%
Fig. 3. Band structure, partial density of states, and polarized absorption spectrum of face-contact Ti3+-Ti4+ ion pair model[93]
Fig. 4. Band structure and polarized absorption spectrum of line-contact Ti3+-Ti3+ ion pair model[93]
Fig. 8. Ti∶sapphire single crystals grown by HEM. (a) Ф235 mm×72 mm; (b) Ф242 mm×76 mm
Fig. 10. Reference laser beam shape and transmittance laser beam shapes passing through different test regions of Ti∶sapphire crystal[105]
Fig. 12. Study on doping of LaAlO3 crystal. (a) Rhombic domain in pure LaAlO3; (b) domain-free structure in Nd,Th∶LaAlO3 crystal along [100][131]
Fig. 13. Output power as function of absorbed power for Nd,Th∶LaAlO3 crystal[131]
Fig. 15. Mid-infrared fluoride laser crystals. (a) Ho∶LaF3; (b) Tm∶LaF3; (c) Tm∶LiYF4; (d) Ho∶BaY2F8; (e) Ho∶CeF3; (f) Ho∶PbF2; (g) Ho∶LiLuF4; (h) Ho, Pr∶LiLuF4; (i) Tm∶LiLuF4
Fig. 18. Comparison of absorption and emission bandwidth of Tm3+-doped crystals[213]
Fig. 19. Diamond grown on surface of YAG crystal. (a) YAG crystals with diamond films; (b) scanning electron microscope (SEM) image of diamond; (c) comparison of YAG thermal conductivity with diamond/YAG thermal conductivity; (d) YAG transmittance curves before and after diamond growth[262]
Fig. 20. Growth of diamond on Ti∶sapphire surface using chromium transition layer. (a) XRD patterns of Ti∶sapphire samples with chromium transition layer deposited and Ti∶sapphire samples with diamond grown on transition layer; (b) cross section SEM image of diamond/chromium/Ti∶sapphire; (c) top view of differential charge density of carbon atoms on Cr (110) surface obtained based on VASP software, where yellow represents electron aggregation region and blue represents electron disappearance region[263]
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Chengchun Zhao, Shanming Li, Min Xu, Qiannan Fang, Shulong Zhang, Conghui Huang, Qiaorui Gong, Guangzhu Chen, Yin Hang. Research Progress in Laser Crystals[J]. Chinese Journal of Lasers, 2024, 51(11): 1101022
Category: laser devices and laser physics
Received: Feb. 21, 2024
Accepted: Apr. 3, 2024
Published Online: Jun. 3, 2024
The Author Email: Hang Yin (yhang@siom.ac.cn)
CSTR:32183.14.CJL240606