Chinese Optics, Volume. 17, Issue 3, 693(2024)
Design and application of CCD/EMCCD photoelectronic parameter test system
Fig. 2. The block diagram of the direct and pulse voltage source unit
Fig. 4. Block diagram of the device (outlined by a dashed line) implemented in FPGA
Fig. 7. Schematic diagram of the experimental driver on the base of GaN HEMT
Fig. 8. Driver’s power consumption and temperature at different output voltages and loads
Fig. 9. Flow chart for measuring maximum output voltage, charge capacity, and output amplifier responsivity
Fig. 10. Measuring results of test system. Volt-charge responsivity for normal and gain modes, average dark signal, and dependence of gain on R02HV voltage were measured
Table 1. Parameters of 16 DC channels
View tableView in ArticleTable 1. Parameters of 16 DC channels
Channel quantity Setting range/ V Total relative error Noise, mV/300 kHz 1 −5···+10 typical: ±0.1%; maximal: ±0.5% from Vmax <0.15 3 0···+15 < 0.15 4 −5···+15 < 0. 20 4 0···+25 < 0.40 4 0···35 < 0.70
Table 2. Parameters of 16 AC channels
View tableView in ArticleTable 2. Parameters of 16 AC channels
Channel quantity Setting range/ V Wave front/ ns Load (each channel) 3 HL, LL: –5...+10 120..200 up to 24 nF 4 HL: –5...+10 or 0...+15 LL: –5...+10 or 0...+15 < 15 220 pF 1 HL: 0...+15 LL: 0...+15 < 15 220 pF 6 HL: +5 LL: 0 < 5 150 pF 1 HL: –5...+ 15; LL, ML: –5...+10 (three level signal) 120..200 up to 24 nF 1 HL: –5...+45 LL: –5...+ 45 (square or sine wave) 20 100 pF
Table 3. Electrical parameters of EMCCD matrices measured by the test system
View tableView in ArticleTable 3. Electrical parameters of EMCCD matrices measured by the test system
No Parameter Range 1 Resistances between the pairs of chip contact pads 2 Average Dark Signal > 1 e/pixel/s 3 Dark Signal Non-uniformity (DSNU) 4 Multiplication Gain 1～1000 5 Peak Output Voltage (POV) < 1 V 6 Output Amplifier Responsivity (OAR) μV/e- 7 Register Charge Handling 8 Electric Charge Transfer Efficiency (CTE) ≤ 0.99995
Table 4. Measurements example of test system
View tableView in ArticleTable 4. Measurements example of test system
1. POV nm, norm mode (max) = 0.177 V; 2. SC is (saturation charge) = 132151 e`/pixel; 3. POV hgm, high gain mode (max) = 1.782 V; 4. CHCgr, Charge Handling Capability of gain register = 1280481 e`/pixel; 5. White column defects = 3 6. Dark column defects quantity = 18 7. Average Dark Signal (U) = 0.002939 V/pixel/s 8. Average Dark Signal (e`) = 2396 e`/pixel/s 9. OAR (output amplifier responsivity) = 1.416 uV/e` (NM: 1.226 uV/e`) 10. Dark signal non-uniformity (DSNU) (rms) = 67.334 % 11. Charge transfer efficiency (CTE) = 99.908 %
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Ji SHEN, VIACHESLAV V. Zabudsky, Wei-jing CHANG, Qi-yue NA, Yun-fei JIAN, OLEG V. Rikhalsky, OLEKSANDR G. Golenkov, VOLODYMYR P. Reva. Design and application of CCD/EMCCD photoelectronic parameter test system[J]. Chinese Optics, 2024, 17(3): 693
Category: Original Article
Received: Jul. 4, 2023
Accepted: Aug. 28, 2023
Published Online: Jul. 31, 2024
The Author Email: Ji SHEN (njustshenji@126.com)
