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Acta Optica Sinica, Volume. 42, Issue 10, 1022002(2022)

Critical Pattern Selection Method for Full-Chip Source and Mask Optimization Based on Depth-First Search

Xinhua Yang1,2, Sikun Li1,2、*, Lufeng Liao1,2, Libin Zhang3, Shuang Zhang3, Shengrui Zhang4, Weijie Shi4, Yayi Wei3, and Xiangzhao Wang1,2
Author Affiliations
  • 1Laboratory of Information Optics and Opto-Electronic Technology, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3Integrated Circuit Advanced Process R & D Center, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China;
  • 4DongFang JingYuan Electron Limited, Beijing 100176, China
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    AbstractGet PDF(in Chinese)
    Figures&Tables (16)
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    References (21)
    Cited By (2)
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    Figures & Tables(16)
    Schematic diagram of frequency extraction

    Fig. 1. Schematic diagram of frequency extraction

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    Schematic diagram of frequency grouping

    Fig. 2. Schematic diagram of frequency grouping

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    Flow chart of critical pattern selection

    Fig. 3. Flow chart of critical pattern selection

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    Selection results of proposed method. (a) Group A; (b) group B

    Fig. 4. Selection results of proposed method. (a) Group A; (b) group B

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    Selection results of Tachyon Tflex method

    Fig. 5. Selection results of Tachyon Tflex method

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    Optimized sources. (a) Group A of proposed method; (b) group B of proposed method; (c) Tachyon Tflex method

    Fig. 6. Optimized sources. (a) Group A of proposed method; (b) group B of proposed method; (c) Tachyon Tflex method

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    Process windows obtained after mask optimization. (a) Common process windows; (b) EL varying with DOF (group A and Tachyon Tflex)

    Fig. 7. Process windows obtained after mask optimization. (a) Common process windows; (b) EL varying with DOF (group A and Tachyon Tflex)

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    Process windows obtained after mask optimization. (a) Common process windows; (b) EL varying with DOF (group B and Tachyon Tflex)

    Fig. 8. Process windows obtained after mask optimization. (a) Common process windows; (b) EL varying with DOF (group B and Tachyon Tflex)

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    Selection results of proposed method

    Fig. 9. Selection results of proposed method

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    Selection results of Tachyon Tflex method

    Fig. 10. Selection results of Tachyon Tflex method

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    Optimized source obtained by Tachyon Tflex method

    Fig. 11. Optimized source obtained by Tachyon Tflex method

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    Light sources after mask optimization for critical pattern groups B1--B8 obtained by proposed method

    Fig. 12. Light sources after mask optimization for critical pattern groups B1--B8 obtained by proposed method

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    Comparison of public process windows and EL varying with DOF. (a) B1; (b) B2; (c) B3; (d) B4; (e) B5; (f) B6; (g) B7; (h) B8

    Fig. 13. Comparison of public process windows and EL varying with DOF. (a) B1; (b) B2; (c) B3; (d) B4; (e) B5; (f) B6; (g) B7; (h) B8

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    • Table 1. Simulation settings

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      Table 1. Simulation settings

      Lithography toolNXT:1950i
      MaskBinary/dark field
      SourceFreeform
      Polarizationx,y

    • Table 2. Comparison of key indicators under 10%CD deviation and 5%EL variation

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      Table 2. Comparison of key indicators under 10%CD deviation and 5%EL variation

      Critical patternDOF /nmMEEFILS
      Group A130.942.0923.24
      Group B131.322.1722.96
      Tachyon Tflex128.942.0923.28

    • Table 3. Comparison of key indicators under 5%EL and 10%CD deviation (graph periodicity is not considered)

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      Table 3. Comparison of key indicators under 5%EL and 10%CD deviation (graph periodicity is not considered)

      Critical patternDOF /nmMEEFILS
      B1130.362.1123.21
      B2133.32.1423.23
      B3128.342.1023.21
      B4129.582.1623.42
      B5134.762.1123.16
      B6134.162.1123.23
      B7133.982.1023.22
      B8133.162.1123.13
      Pattern obtained byTachyon Tflex129.662.0923.21
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    Xinhua Yang, Sikun Li, Lufeng Liao, Libin Zhang, Shuang Zhang, Shengrui Zhang, Weijie Shi, Yayi Wei, Xiangzhao Wang. Critical Pattern Selection Method for Full-Chip Source and Mask Optimization Based on Depth-First Search[J]. Acta Optica Sinica, 2022, 42(10): 1022002

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    Paper Information

    Category: Optical Design and Fabrication

    Received: Nov. 17, 2021

    Accepted: Dec. 13, 2021

    Published Online: May. 10, 2022

    The Author Email: Li Sikun (lisikun@siom.ac.com)

    DOI:10.3788/AOS202242.1022002

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology