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Chinese Journal of Lasers, Volume. 47, Issue 7, 701016(2020)

Research Progress on 1.3 μm Semiconductor Quantum-Dot Lasers

Lü Zunren1,2, Zhang Zhongkai1,2, Wang Hong1,2, Ding Yunyun1,2, Yang Xiaoguang1,2, Meng Lei1,2, Chai Hongyu1,2, and Yang Tao1,2、*
Author Affiliations
  • 1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences,Beijing 100049, China
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    AbstractGet PDF(in Chinese)
    Figures&Tables (10)
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    References (99)
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    Figures & Tables(10)
    Schematic of different materials and corresponding density of states[10]. (a) Bulk material; (b) quantum well; (c) quantum wires; (d) quantum dots

    Fig. 1. Schematic of different materials and corresponding density of states[10]. (a) Bulk material; (b) quantum well; (c) quantum wires; (d) quantum dots

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    Schematic of etching process for preparing quantum dot structure[11]. (a) Lower quantum well structure; (b) lithography and etching along the direction ; (c) HCl solution etching; (d) lithography and etching along the direction 1ˉ</mover

    Fig. 2. Schematic of etching process for preparing quantum dot structure[11]. (a) Lower quantum well structure; (b) lithography and etching along the direction <011>; (c) HCl solution etching; (d) lithography and etching along the direction <011ˉ

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    Schematic of SK growth mode

    Fig. 3. Schematic of SK growth mode

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    Comparison of power-current curves between undoped and Si-doped quantum dot lasers[26]

    Fig. 4. Comparison of power-current curves between undoped and Si-doped quantum dot lasers[26]

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    Schematic of discrete energy levels of quantum dots[32]

    Fig. 5. Schematic of discrete energy levels of quantum dots[32]

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    Eye map of variable-temperature large signal at 10 Gbit/s direct modulation rate[51].(a) 25 ℃; (b) 50 ℃; (c) 75 ℃; (d) 85 ℃

    Fig. 6. Eye map of variable-temperature large signal at 10 Gbit/s direct modulation rate[51].(a) 25 ℃; (b) 50 ℃; (c) 75 ℃; (d) 85 ℃

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    Structure diagram of quantum dot laser prepared by V-groove method[95]

    Fig. 7. Structure diagram of quantum dot laser prepared by V-groove method[95]

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    Cross-section bright-field transmission electron microscopy image of growth buffer layer structure of GaAs/Si(001) substrate[99]

    Fig. 8. Cross-section bright-field transmission electron microscopy image of growth buffer layer structure of GaAs/Si(001) substrate[99]

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    Relationship between dislocation density and distance of III-V/Si heterointerface[99]

    Fig. 9. Relationship between dislocation density and distance of III-V/Si heterointerface[99]

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    • Table 1. Research progress of 1.3 μm band quantum dot laser on Si(001) substrate

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      Table 1. Research progress of 1.3 μm band quantum dot laser on Si(001) substrate

      YearDescriptionDislocationdensity /(cm-2)Thresholdcurrent /(A·cm-2)Maxoutputpower /mWMaxoperatingtemperature / ℃Reference
      2017GaP/Si (001)3.0×10886211090[86]
      2017V-groove Si (001)7.0×1075008480[95]
      2017GaAs/Si (001)by MOCVD—42543102 (pulse)36 (CW)[97]
      2017GaP/Si (001)7.3×10613217580[89]
      2018GaAs/Si (001)by MBE5.0×107320 (pulse)30 (pulse)70 (pulse)[99]
      2018GaP/Si (001)8.4×10619818585[92]
      2019GaAs/Si (001)by MBE4.7×107370—101[100]
      2020GaAs/Si (001)by MOCVD3.0×1071735280[98]
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    Lü Zunren, Zhang Zhongkai, Wang Hong, Ding Yunyun, Yang Xiaoguang, Meng Lei, Chai Hongyu, Yang Tao. Research Progress on 1.3 μm Semiconductor Quantum-Dot Lasers[J]. Chinese Journal of Lasers, 2020, 47(7): 701016

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    Paper Information

    Special Issue:

    Received: Feb. 12, 2020

    Accepted: --

    Published Online: Jul. 10, 2020

    The Author Email: Tao Yang (tyang@semi.ac.cn)

    DOI:10.3788/CJL202047.0701016

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology