[1] LIU C, YE H F, SHI Y L. Advances in near-infrared avalanche diode single-photon detectors[J]. Chip, 1, 100005(2022).

[2] BENEDIKOVIC D, VIROT L, AUBIN G et al. Silicon-germanium avalanche receivers with fj/bit energy consumption[J]. IEEE Journal of Selected Topics in Quantum Electronics, 28, 1-8(2022).

[3] WANG B H, HUANG Z H, SORIN W V et al. A low-voltage Si-Ge avalanche photodiode for high-speed and energy efficient silicon photonic links[J]. Journal of Lightwave Technology, 38, 3156-3163(2020).

[4] SRINIVASAN S A, LAMBRECHT J, GUERMANDI D et al. 56 Gb/s NRZ O-band hybrid BiCMOS-silicon photonics receiver using Ge/Si avalanche photodiode[J]. Journal of Lightwave Technology, 39, 1409-1415(2021).

[5] YAMAMOTO Y, OSHITA M, SAITO S et al. Near-infrared spectroscopic gas detection using a surface plasmon resonance photodetector with 20 nm resolution[J]. ACS Applied Nano Materials, 4, 13405-13412(2021).

[6] HAKKEL K D, PETRUZZELLA M, OU F et al. Integrated near-infrared spectral sensing[J]. Nature Communications, 13, 103(2022).

[7] LIU D Q, LI T T, TANG B et al. A near-infrared CMOS silicon avalanche photodetector with ultra-low temperature coefficient of breakdown voltage[J]. Micromachines, 13, 47(2021).

[8] XIAO Sheng, YE Wei, BIAN Ningtao et al. Design and characterization of mid-wave infrared heterostructure InSb APD detector[J]. Laser & Infrared, 51, 888-896(2021).

[9] SI Junjie. Novel InSb-based infrared detector materials (Invited)[J]. Infrared and Laser Engineering, 51, 20210811(2022).

[10] PENG Yongda, JIA Xinliang, WANG Chao et al. The study of process realization and characteristics for avalanche photodiode with SAM structure[J]. Electronic Technology, 47, 16-18(2018).

[11] GU Y, TAN M, WU Y et al. InAlAs/InGaAs avalanche photodiodes with optimized multiplication layers (in English)[J]. Journal of Infrared and Millimeter Waves, 40, 715-720(2021).

[12] WANG Hang, YUAN Zhengbing, TAN Ming et al. Effect of multiplication layer thickness on device properties of In0.53Ga0.47As/InP avalanche photodiode[J]. Acta Optica Sinica, 40, 1804001(2020).

[13] YE Wei, DU Pengfei, XIAO Sheng et al. Influence of InAlAs concentration on In0.83Al0.17As/In0.83Ga0.17As infrared detector characteristics[J]. Journal of Applied Optics, 43, 317-324(2022).

[14] CAO Y, BLAIN T, TAYLOR-MEW J D et al. Extremely low excess noise avalanche photodiode with GaAsSb absorption region and AlGaAsSb avalanche region[J]. Applied Physics Letters, 122, 051103(2023).

[15] XIE H Q, PENG Y D, LI J Y et al. Lateral separate absorption multibuffer multiplication avalanche photodiode based on SOI film[J]. IEEE Transactions on Electron Devices, 66, 3003-3006(2019).

[16] LI J K, DEHZANGI A, BROWN G et al. Mid-wavelength infrared avalanche photodetector with AlAsSb/GaSb superlattice[J]. Scientific Reports, 11, 7104(2021).

[17] JIANG Y, CHEN J. Optimization of the linearity of InGaAs/InAlAs SAGCM APDs[J]. Journal of Lightwave Technology, 37, 3459-3464(2019).

[18] WANG Aoshuang, XIAO Qingquan, CHEN Hao et al. Design and simulation of Mg2Si/Si avalanche photodiode[J]. Acta Physica Sinica, 70, 337-345(2021).

[19] WANG Y D, CHEN J, XU J T et al. Modeling of frequency-dependent negative differential capacitance in InGaAs/InP photodiode[J]. Infrared Physics & Technology, 89, 41-45(2018).