Journal of Applied Optics, Volume. 45, Issue 3, 659(2024)
Effect of type I multiplier layer on performance of InSb-APD infrared detector with heterogeneous SAM structure
Figures & Tables(8)
Fig. 2. Relationship between residual doping concentration of multiplier layer on optical properties of device
Fig. 4. Relationship between thickness of multiplier layer on optical properties of device
Fig. 6. Relationship between thickness of multiplier layer on capacitance, breakdown voltage and through-put voltage
Fig. 7. Relationship between different multiplier layer thicknesses and internal electric field distribution
Table 1. Main parameters of model material during simulation
View tableView in ArticleTable 1. Main parameters of model material during simulation
Material GaSb InSb InP No-band width/eV 0.726 0.17 1.344 Electron affinity/eV 4.06 4.59 4.4 SRH carrier lifetime/s τn=1×10−8τp=6×10−7 τn=5×10−8τp=5×10−8 τn=1×10−9τp=1×10−9 Roscher factor/cm6/S Cn=5×10−30Cp=5×10−30 Cn=5×10−26Cp=5×10−26 Cn=9×10−31Cp=9×10−31 Dielectric constant ε 15.7 ε0 16.8 ε0 12.5 ε0 Valence band and conduction band effective density of states/cm−3 Nc=2.1×1017Nv=1.8×1019 Nc= 4.2×1016Nv= 7.3×1018 Nc=5.7×1017Nv=1.1×1019 Effective quality me=0.014 m0mh=0.43 m0
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Xiaokun FANG, Wei YE, Beibei QUAN, Chaoyang ZHU, Sheng XIAO. Effect of type I multiplier layer on performance of InSb-APD infrared detector with heterogeneous SAM structure[J]. Journal of Applied Optics, 2024, 45(3): 659
Paper Information
Category: Research Articles
Received: Mar. 30, 2023
Accepted: --
Published Online: Jun. 2, 2024
The Author Email: Wei YE (叶伟（1977—）)
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