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Journal of Synthetic Crystals, Volume. 54, Issue 2, 312(2025)

β-Ga2O3 Field-Effect Transistors with Doped Epitaxial Layer Grown by MOCVD

YU Xinxin1, SHEN Rui1,2, YU Han3, ZHANG Zhao3, SAI Qinglin4, CHEN Duanyang4,5, YANG Zhenni5,6, QIAO Bing1, ZHOU Likun1, LI Zhonghui1,2、*, DONG Xin3, ZHANG Hongliang6, QI Hongji4,5, and CHEN Tangsheng2
Author Affiliations
  • 1CETC Key Laboratory of Carbon-based Electronics, Nanjing Electronic Devices Institute, Nanjing 210016, China
  • 2National Key Laboratory of Solid-State Microwave Devices and Circuits, Nanjing 210016, China
  • 3State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
  • 4Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • 5Fujia Gallium Technology Co. Ltd., Hangzhou 311421, China
  • 6College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, China
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    YU Xinxin, SHEN Rui, YU Han, ZHANG Zhao, SAI Qinglin, CHEN Duanyang, YANG Zhenni, QIAO Bing, ZHOU Likun, LI Zhonghui, DONG Xin, ZHANG Hongliang, QI Hongji, CHEN Tangsheng. β-Ga2O3 Field-Effect Transistors with Doped Epitaxial Layer Grown by MOCVD[J]. Journal of Synthetic Crystals, 2025, 54(2): 312

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    Paper Information

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    Received: Nov. 20, 2024

    Accepted: Mar. 31, 2025

    Published Online: Mar. 31, 2025

    The Author Email: LI Zhonghui (zhonghuili@126.com)

    DOI:10.16553/j.cnki.issn1000-985x.2024.0284

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology