Journal of Inorganic Materials, Volume. 34, Issue 3, 279(2019)
Technologies and Applications of Thermoelectric Devices: Current Status, Challenges and Prospects
Figures & Tables(12)
![Timelines underscoring the improvement in (a) zT value of typical thermoelectric materials[6,7] and (b) conversion efficiency of typical thermoelectric power generation devices[10,11,12,13,14,15,16,17,18,19,20,21,22,23,24,25,26,27,28,29,30,31,32,33,34,35,36,37,38,39,40]](/Images/icon/loading.gif){kind=icon}
. Schematic diagram of the full-chain development of thermoelectric conversion technology
. Diagram of key scientific and technical issues in the design and integration of TE devices
. Schematic diagram of energy conversion process for thermoelectric power generation devices[45]
. (a) Conversion efficiency as a function of thermoelectricelement height for different thermal contact parameter,r ,and (b) power output ratio P c/P max as a function of the electrical contact parameter,n, for different thermoelectric element height[46]
. Schematic diagram of various thermal losses in thermoelectric devices
. Analogical scheme of the thermoelectric phenomena with the thermal capacitances $C_{n}=\rho ·n·C_{p_{n}}·\frac{H}{N}·A$ and thermal conductances $K_{n}=\frac{k_{n}·A}{H/N}$ [55]
. Logical framework for the full-parameter optimization of a thermoelectric power generation module[40]
. Scanning electron microscope images of CoSb3/Ti/Mo-Cu interface after thermal aging at 550 ℃ for different periods[115]
(a) 0; (b) 8 d; (c) 20 d; (d) 30 d
(a) 0; (b) 8 d; (c) 20 d; (d) 30 d
. (a) Schematic diagram of the formation of Ti(100-x )Alx -Yb0.6Co4Sb12 interface, (b) the diffusion layer thickness and (c) specificcontact resistivity of the Ti(100-x )Alx -Yb0.6Co4Sb12 interface as a function of the thermal aging time under 600 ℃ and vacuum condition[79]
Table 1. Electrode, interface layer and joining method of typical thermoelectric devices
View tableView in ArticleTable 1. Electrode, interface layer and joining method of typical thermoelectric devices
Thermoelectric material (Th/Tc)/℃ Electrode Interface layer Joining method Ref. Bismuth telluride 240/22 Cu Ni Soldering [59-60] Bismuth telluride - - Ni One-step hot press sintering [61] Bismuth telluride 200/- Cu Ni Solid-liquid diffusion welding [62] Bismuth telluride 250/50 Al Mo Plasma spraying [63] Bismuth telluride 240/20 Cu Mo Arc spraying [64] MgAg0.965Ni0.005Sb0.99 245/20 Ag - Diffusion welding [65] Poly[Ax(M-ett)] 147/67 Hot side: Al Au [66] Cold side: Ag n-type PbTe + p-type TAGS 85 500/100 Ag Ag/Fe/Ag + Fe Diffusion welding [25] Skutterudite 500/40 Al Mo Brazing [67] Skutterudite 550/70 n-type: CoSi2 [31] p-type: Co2Si Skutterudite 600/35 Hot side: Mo-Cu
Cold side: CuTi-Al Brazing [17] n-type Bi2Te3/PbTe +
p-type Sb2Te3/PbTe600/10 Cu Hot side: Co0.8Fe0.2 Liquid InGa eutectic alloy [35] Cold side: Ni Bismuth telluride/ Skutterudite 600/35 Hot side: Mo-Cu Hot side: Ti-Al Welding [40] Cold side: Cu Cold side: Ni Half-Heusler 718/63 Hot side: Mo-Cu Brazing [18] Cold side: Cu n-type Fe0.93Co0.07Si1.99Al0.01 +
p-type MnSi1.73700/100 TiSi2 Welding [19] SiGealloy 870/31 Mo Pressure contact Cold side In welding [68] SiGe alloy 553/44 Mo C Brazing [69] SiGe alloy 1000/300 With Ti layer Diffusion welding [70] n-type Ca0.92La0.08MnO3 +
p-type Ca2.75Gd0.25Co4O9773 /383 Silver electrode Silver paste [71] p-type Mg2Si0.53Sn0.4Ge0.05Bi0.02 +
n-type MnSi1.75Ge0.01735/50 Hot side: Mo p-type: Ni/Pb/Ni Spring contact [37] Cold side: Cu n-type: Cu
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Qi-Hao ZHANG, Sheng-Qiang BAI, Li-Dong CHEN, [in Chinese], [in Chinese], [in Chinese]. Technologies and Applications of Thermoelectric Devices: Current Status, Challenges and Prospects[J]. Journal of Inorganic Materials, 2019, 34(3): 279
Paper Information
Category: Research Articles
Received: Oct. 8, 2018
Accepted: --
Published Online: Sep. 26, 2021
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