Fig. 1. Technology route of Sb₂（S，Se）₃ thin film solar cell

Fig. 2. Schematic of spin coating method of Sb₂（S，Se）₃ thin films：（a）one-step spin coating Sb-Se-S complex precursor solution ^［38］，（b）sequential spin-coating Sb–Se and Sb-S complex precursor solution^［39］，schematic of chemical bath deposition method of Sb₂（S，Se）₃ thin films：（c）tube furnace selenization ^［40-41］，（d）spin-coated annealing selenization ^［42］

Fig. 3. Schematic of the hydrothermal deposition method of Sb₂（S，Se）₃ thin films：（a）position of the substrate in the autoclave，（b）schematic of carrier transport in （Sb₄S（e）₆）_n ribbons with different orientations （after Ref. ［46］），（c）EDTA in precursor solution （after Ref. ［47］），（d）NaF-SPT treatment on Sb₂（S，Se）₃ thin films，（e）J-V curves of control and SPT-based Sb₂（S，Se）₃ thin films （after Ref. ［22］）

Fig. 4. Schematic of closed-space sublimation method of Sb₂（S，Se）₃ thin films：（a）one temperature zone horizontal tube furnace （after Ref. ［48］），（b）a mixture of Sb₂S₃ and Sb₂Se₃ powder as the evaporation source （after Ref. ［49］），（c）closed-space sublimation system using tungsten halogen lamp heating （after Ref. ［50］），（d）dual-plane-source structure，（e）asymptotic distribution of selenium content in the Sb₂（S，Se）₃ thin films （after Ref. ［51］），schematic of vapor transport deposition of Sb₂（S，Se）₃ thin films：（f）dual temperature zone evaporation system with Sb₂S₃ and Sb₂Se₃ powder as the evaporation source （after Ref. ［54］），（g）evaporation system with independent regulation of evaporation source-substrate distance and evaporation temperature，（h）conditions of deposition corresponding to the onset of evaporation time for different sulfur sources （after Ref. ［55］），（i）double Sb₂（S，Se）₃ evaporation source structure，（j）J-V characteristic curves of devices prepared with different evaporation source-to-substrate distances （after Ref. ［56］），（k）schematics of the pulsed laser deposition system （after Ref. ［57］）

Fig. 5. Sb₂（S，Se）₃ solar cell with double electron transport layer （ETL）：（a）structure diagram of solar cell device （after Ref. ［76］），（b）energy band alignment diagram of different layers （after Ref. ［77］），（c-f）J-V curves of Sb₂（S，Se）₃ solar cells with different ETLs^{（after Ref. ［50，76-78］），（g）external quantum efficiency spectra of Zn（O，S）/CdS ETL-based Sb₂（S，Se）₃ solar cell devices with different CdS deposition times，（h）transmittance spectra of CdS，Zn（O，S）/CdS，and Zn（O，S）ETLs during CdCl₂ treatment （after Ref. ［85］）}

Fig. 6. （a）J-V curves of W/O hole transport layer （HTL），Spiro-OMeTAD，and DTPThMe-ThTPA devices （after Ref. ［89］），Sb₂（S，Se）₃ solar cell with perovskite quantum dots （QDs）HTL，TEM images of （b）MAPbBr₃ QDs and （c）CsPbBr₃ QDs，（d）energy level diagram of the device，（e）stability test for the devices （after Ref. ［90］），Sb₂（S，Se）₃ solar cell with MnS HTL：（f）a cross-sectional SEM image of the device，（g）J-V curves of the Sb₂（S，Se）₃ solar cells based on Spiro-OMeTAD HTL and the MnS HTL with or without annealing in air，（h）the corresponding normalized power conversion efficiency of the device measured after storage in ambient air for 45 days （after Ref. ［91］）

Fig. 7. Sb₂（S，Se）₃ solar cell device with carbon back electrode：（a）the schematic diagram of the device，（b）the band alignment diagram of the device （after Ref. ［84］），Sb₂（S，Se）₃ solar cells with MXene back electrode：（c）the schematic diagram of spraying deposition MXene，（d）the schematic diagram of the connection between Sb₂（S，Se）₃ layer and MXene layer （after Ref. ［92］）

Fig. 8. （a-b）The band alignment diagram of the Sb₂S₃/Sb₂（S，Se）₃ device （after Ref. ［45，98］），（c）energy level diagram for Sb₂（S，Se）₃ devices based on unetched and etched samples （after Ref. ［99］），（d）the schematic diagram of the Sb₂（S，Se）₃ solar cell with an increasing selenium content （after Ref. ［100］），（e）energy level diagram of triple-junction solar cell with gradient Sb₂（S，Se）₃ mid-cell （after Ref. ［101］）