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Acta Optica Sinica, Volume. 43, Issue 4, 0404001(2023)

Effect of In0.83Al0.17As Multiplication Layer on Characteristics of In0.83Ga0.17As/GaAs Avalanche Photodetector

Wei Ye1、*, Pengfei Du1、aff, Beibei Quan2、aff, Mengfei Li1、aff, Sheng Xiao1、aff, and Jia Liu1、aff
Author Affiliations
  • 1School of Mechanical Engineering, Shaanxi University of Technology, Hanzhong 723001, Shaanxi, China
  • 2Northwest Industries Group Co., Ltd., Xi'an 710043, Shaanxi, China
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    AbstractGet PDF(in Chinese)
    Figures&Tables (9)
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    References (27)
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    Figures & Tables(9)
    Schematic diagram of device structure

    Fig. 1. Schematic diagram of device structure

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    Energy band and electric field distribution of device

    Fig. 2. Energy band and electric field distribution of device

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    Relationship between refractive index and wavelength. (a) InGaAs material; (b) InAlAs material

    Fig. 3. Relationship between refractive index and wavelength. (a) InGaAs material; (b) InAlAs material

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    Current characteristics of device. (a) I-V characteristics; (b) gain

    Fig. 4. Current characteristics of device. (a) I-V characteristics; (b) gain

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    Electric field distributions of device. (a) Effect of doping concentration of multiplication layer on electric field distribution;(b) effect of thickness of multiplication layer on electric field distribution

    Fig. 5. Electric field distributions of device. (a) Effect of doping concentration of multiplication layer on electric field distribution;(b) effect of thickness of multiplication layer on electric field distribution

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    Effect of doping concentration of multiplication layer on Vp and Vb. (a) I-V characteristics; (b) change curves of Vp and Vb

    Fig. 6. Effect of doping concentration of multiplication layer on Vp and Vb. (a) I-V characteristics; (b) change curves of Vp and Vb

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    Effect of thickness of multiplication layer on Vp and Vb. (a) I-V characteristics; (b) change curves of Vp and Vb

    Fig. 7. Effect of thickness of multiplication layer on Vp and Vb. (a) I-V characteristics; (b) change curves of Vp and Vb

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    C-V characteristic of devices. (a) Effect of doping concentration of multiplication layer on capacitance; (b) effect of thickness of multiplication layer on capacitance

    Fig. 8. C-V characteristic of devices. (a) Effect of doping concentration of multiplication layer on capacitance; (b) effect of thickness of multiplication layer on capacitance

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    • Table 1. Material parameters in simulation model

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      Table 1. Material parameters in simulation model

      ParameterInGaAsInAlAs
      Band gap /eV0.480.79
      Electron affinity /eV4.474.61
      Electron Shockley-Read-Hall（SRH）lifetime /s1×10-104×10-13
      Hole SRH lifetime /s1×10-104×10-13
      Electron mobility /（cm2·V-1·s-1）14482500
      Hole mobility /（cm2·V-1·s-1）269233
      Electron Auger coefficient /（cm6·s-1）7×10-297×10-29
      Hole Auger coefficient /（cm6·s-1）7×10-297×10-29
      Effective conduction band density of states /cm-31.26×10172.61×1017
      Effective valence band density of states /cm-31.1×10197.63×1018
      Permittivity14.6313.96
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    Wei Ye, Pengfei Du, Beibei Quan, Mengfei Li, Sheng Xiao, Jia Liu. Effect of In0.83Al0.17As Multiplication Layer on Characteristics of In0.83Ga0.17As/GaAs Avalanche Photodetector[J]. Acta Optica Sinica, 2023, 43(4): 0404001

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    Paper Information

    Category: Detectors

    Received: Jul. 4, 2022

    Accepted: Sep. 6, 2022

    Published Online: Feb. 16, 2023

    The Author Email: Ye Wei (yewei518@163.com)

    DOI:10.3788/AOS221416

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology