Effect of In0.83Al0.17As Multiplication Layer on Characteristics of In0.83Ga0.17As/GaAs Avalanche Photodetector

Wei Ye; Pengfei Du; Beibei Quan; Mengfei Li; Sheng Xiao; Jia Liu

doi:10.3788/AOS221416

Acta Optica Sinica, Volume. 43, Issue 4, 0404001(2023)

Effect of In_0.83Al_0.17As Multiplication Layer on Characteristics of In_0.83Ga_0.17As/GaAs Avalanche Photodetector

Wei Ye^1、*, Pengfei Du^1、aff, Beibei Quan^2、aff, Mengfei Li^1、aff, Sheng Xiao^1、aff, and Jia Liu^1、aff

Author Affiliations

¹School of Mechanical Engineering, Shaanxi University of Technology, Hanzhong 723001, Shaanxi, China

²Northwest Industries Group Co., Ltd., Xi'an 710043, Shaanxi, China

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Wei Ye, Pengfei Du, Beibei Quan, Mengfei Li, Sheng Xiao, Jia Liu. Effect of In_0.83Al_0.17As Multiplication Layer on Characteristics of In_0.83Ga_0.17As/GaAs Avalanche Photodetector[J]. Acta Optica Sinica, 2023, 43(4): 0404001

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Paper Information

Category: Detectors

Received: Jul. 4, 2022

Accepted: Sep. 6, 2022

Published Online: Feb. 16, 2023

The Author Email: Ye Wei (yewei518@163.com)

DOI:10.3788/AOS221416

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology