Effect of Zn Diffusion on Avalanche Breakdown Probability of InGaAs/InP Single Photon Avalanche Diodes

Kefei GUO; Fei YIN; Liyu LIU; Kai QIAO; Ming LI; Tao WANG; Mengyan FANG; Chao JI; Youshan QU; Jinshou TIAN; Xing WANG

doi:10.3788/gzxb20235206.0604001

Acta Photonica Sinica, Volume. 52, Issue 6, 0604001(2023)

Effect of Zn Diffusion on Avalanche Breakdown Probability of InGaAs/InP Single Photon Avalanche Diodes

Kefei GUO^1,2, Fei YIN^1,2, Liyu LIU^1,2, Kai QIAO^1,2, Ming LI¹, Tao WANG^1,2, Mengyan FANG^1,2, Chao JI^1,2, Youshan QU^1,2, Jinshou TIAN^1,2, and Xing WANG^1,2、*

Author Affiliations

¹Key Laboratory of Ultrafast Photoelectric Diagnostics Technology, Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi'an 710119, China

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

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Figures & Tables(11)

Fig. 1. Internal structure of back-illuminated InGaAs/InP SPAD

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Fig. 2. Electric field simulation diagram and vertical distribution

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Fig. 3. I-V characteristics and PDE

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Fig. 4. Avalanche breakdown probability simulation diagram and horizontal distribution

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Fig. 5. Different T_shallow avalanche breakdown probability and horizontal electric field distribution at V_ex =5 V

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Fig. 6. Avalanche breakdown probability of different lateral diffusion factor at V_ex=5 V

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Fig. 7. Avalanche breakdown probability，horizontal electric field distribution and collision ionization coefficient ratio of different deep diffusion Zn doping concentrations at V_ex=5 V

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Fig. 8. I-V characteristics and avalanche breakdown probability at different temperatures

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Fig. 9. Variation curve of breakdown voltage and avalanche breakdown probability with temperature

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Table 1. Device structure parameters

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Table 1. Device structure parameters

Component	Layer	Thickness/μm	Doping concentration/cm^-3
Zn	Shallow	1.7	3×10¹⁸
Zn	Deep	2.3	5×10¹⁸
InP	Cap	3.0	1×10¹⁵
InP	Charge	0.2	1×10¹⁷
InGaAsP	Grading	0.06	1×10¹⁵
InGaAs	Absorption	2.0	1×10¹⁵
InP	Buffer	0.5	5×10¹⁷
InP	Substrate	350	1×10¹⁸

Table 2. Parameters of the van Overstraeten model for InP materials
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Table 2. Parameters of the van Overstraeten model for InP materials
a_low/cm^-1 a_high/cm^-1 b_low/cm^-1 b_high/cm^-1 E₀/（V·cm^-1） ℏω_op/eV
Electron 1.12×10⁷ 2.95×10⁶ 3.10×10⁶ 2.65×10⁶ 3.85×10⁵ 0.063
Hole 4.80×10⁶ 1.62×10⁶ 2.55×10⁶ 2.10×10⁶ 3.85×10⁵ 0.063

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Kefei GUO, Fei YIN, Liyu LIU, Kai QIAO, Ming LI, Tao WANG, Mengyan FANG, Chao JI, Youshan QU, Jinshou TIAN, Xing WANG. Effect of Zn Diffusion on Avalanche Breakdown Probability of InGaAs/InP Single Photon Avalanche Diodes[J]. Acta Photonica Sinica, 2023, 52(6): 0604001

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