Research development on Tm3+/ Ho3+ ions doped mid-infrared ultrafast lasers (Invited)

Jiajia Mao; Ping Hu; Xue Zhou; Huahang Wang; Hongkun Nie; Bingzheng Yan; Ruihua Wang; Baitao Zhang; Tao Li; Kejian Yang; Jingliang He

doi:10.3788/IRLA20210436

Infrared and Laser Engineering, Volume. 50, Issue 8, 20210436(2021)

Research development on Tm³⁺/ Ho³⁺ ions doped mid-infrared ultrafast lasers (Invited)

Jiajia Mao¹, Ping Hu², Xue Zhou¹, Huahang Wang¹, Hongkun Nie¹, Bingzheng Yan¹, Ruihua Wang¹, Baitao Zhang^1,2, Tao Li^1,2, Kejian Yang^1,2,3、*, and Jingliang He^1,2、*

Author Affiliations

¹Institute of Novel Semiconductors, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

²Key Laboratory of Laser & Infrared System, Ministry of Education, Shandong University, Qingdao 266237, China

³Shenzhen Research Institute of Shandong University, Shenzhen 518057, China

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Figures & Tables(15)

Fig. 1. AOM mode-locked Tm,Ho:BaYF laser^[9]

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Fig. 2. AOM mode-locked Ho:YAG laser^[11]

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Fig. 3. Cavity configuration of Kerr-lens mode-locked Ho:YAG thin-disk laser^[110]

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Fig. 4. Cavity configuration of 4-mirrors folded Kerr-lens mode-locked Tm:Sc₂O₃ laser^[113]

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Fig. 5. (a) Gain cross section of Tm:MgWO₄; (b) Scheme of the mode-locked Tm:MgWO₄ laser^[84]

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Fig. 6. Scheme of the mode-locked Tm:LuScO mixed ceramic laser and extra-cavity pulse shortening^[49]

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Fig. 7. Passively mode-locked laser oscillator based on thulium-doped ZBLAN fibers and extra-cavity pulse shortening^[127]

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Fig. 8. Ho:YAG regenerative amplifier^[143]

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Fig. 9. (a) Ho:YLF amplification system；(b) Long term stability of amplified pulse energy^[145]

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Fig. 10. Structure of Ho:YLF multi-pass amplifier^[146]

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Table 1. Development on the actively mode-locked Tm³⁺/ Ho³⁺ doped 2 μm lasers

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Table 1. Development on the actively mode-locked Tm³⁺/ Ho³⁺ doped 2 μm lasers

Doped ions	Material type	Gain materials	Pump sourse	Saturable absorber	Repetition rate/MHz	Pulse duration/ ps	Wavelength/ nm	Output power	Pulse energy/nJ	Year	Ref.
Tm³⁺	Solid	Tm:YAG	786.5 nm Ti: sapphire laser	AO	300	35	2 010	70 mW	0.23	1991	[8]
	Solid	Tm:YLF	793 nm LD	AO	149.3	170	1 910	2.6 W	17.4	2015	[16]
	Fiber	TDF	792 nm LD	AO	37.88	38	1 978	11.8 W	314	2011	[10]
		TDF	792 nm LD	AO	0.06	-	-	5 W	~8000	2012	[17]
		TDF	1.57 μm laser	EO	11.884/ 12.099	816/ 446	1 950	14.3 mW	~0.0012	2013	[18]
		TDF	1550 nm fiber laser	EO	21.4	58	1 980	~10 mW	-	2014	[19]
		TDF	LD	AO	66	200	1 950-2130	53 W	800	2015	[20]
		TDF	1.55 μm laser	EO	40000	1.29	2053	-	-	2017	[21]
Ho³⁺	Solid	Ho:YLF	1940 nm Tm: fiber laser	AO	81.36	290	2 050	4 W	49	2013	[22]
		Ho:YAG	1.9 μm Tm: YLF laser	AO	82.76	102	2097	1.04 W	12.57	2015	[11]
		Ho:LuAG	1910 nm Tm: fiber laser	AO	82.48	333.4	2 010	2.7 W	32.7	2015	[12]
		Ho:YAG	1.9 μm Tm: fiber laser	AO	81.92	294	2 022	3.41 W	41.6	2016	[23]
		Ho:LuVO₄	1940 nm Tm: fiber laser	AO	82.7	363.3	2073.8	3.04 W	36.8	2016	[13]
		Ho:YAG ceramic	1910 nm Tm: fiber laser	AO	82.15	241.5	2122.1	1.84 mW	0.022	2016	[14]
		Ho:Sc₂SiO₅	1940 nm Tm: fiber laser	AO	81.88	282.4	2112.1	2.72 W	33.2	2018	[24]
Tm³⁺/ Ho³⁺	Solid	Tm,Ho: BaYF	780 nm LD	AO	100	97	2066	20 mW	0.2	2003	[9]
Tm³⁺/ Ho³⁺	Fiber	THDF	1570 nm LD	EO	2200	200	1 907-1 927	-	-	2018	[15]
注：TDF: Tm-doped fiber，Tm³⁺掺杂光纤；THDF: Tm-Ho co-doped fiber，Tm³⁺/ Ho³⁺共掺光纤

Table 2. Development on the SESAM mode-locked Tm³⁺/ Ho³⁺ doped 2 μm lasers

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Table 2. Development on the SESAM mode-locked Tm³⁺/ Ho³⁺ doped 2 μm lasers

Doped ions	Material type	Gain materials	Pump sourse	Saturable absorber	Repetition rate/MHz	Pulse duration/fs	Waveleng-th/nm	Output power/mW	Pulse energy/nJ	Year	Ref.
注：HDF: Ho-doped fiber，Ho³⁺掺杂光纤
Tm³⁺	Solid	Tm:GPNG	792 nm Ti: sapphire laser	InGaAsSb-SESAM	222	410	1 997	84	0.38	2010	[39]
		Tm:KYW	801 nm Ti: sapphire laser	InGaAsSb-SESAM	105	386	2 030	235	2.24	2011	[40]
		Tm:Sc₂O₃	796 nm Ti:sapphire laser	InGaAsSb-SESAM	124.3	218	2107	325	2.6	2012	[41]
		Tm:Lu₂O₃ ceramic	796 nm Ti:sapphire laser	InGaAsSb-SESAM	121.2	180	2076	400	3.3	2012	[42]
		Tm:LuYSiO₅	Ti:sapphire laser	InGaAsSb-SESAM	100	19600	1944.3	64.5	0.645	2012	[43]
		Tm:YAG ceramic	785 nm Ti:sapphire laser	InGaAs-SESAM	88.9	6300	2 012	125	1.4	2013	[44]
		Tm:LuAG	789 nm LD	InGaAs-SESAM	129.2	38000	2 022	1210	9.37	2015	[45]
		Tm:CaYAlO₄	790 nm LD	SESAM	145.4	35300	1958.9 & 1960.6	830	5.7	2015	[46]
		Tm:YAG ceramic	786 nm Ti:sapphire laser	GaAs-SESAM	89	3000	2 012	150	1.68	2015	[47]
		Tm:LuAG ceramic	787 nm Ti:sapphire laser	GaSb-SESAM	92	2700	2 022	232	2.52	2017	[48]
		Tm LuScO ceramic	795 nm Ti:sapphire laser	GaAsSb-SESAM	78.9	63	2057	175	2.22	2018	[49]
		Tm:YLF	793 nm LD	GaAs-SESAM	94	31000	1 909	95	1.01	2018	[50]
		Tm:LuYO₃ ceramic	795 nm Ti:sapphire laser	GaSb-SESAM	78	54	2040.5	51	0.65	2020	[32]
		Tm:YAG	790 nm LD	GaAs-SESAM	97.7	47900	2 012	117	1.2	2020	[51]
		Tm:CaF₂	792 nm LD	SESAM	96.35	>1500	1886.8	132	1.37	2020	[52]
	Fiber	TDF	783 nm Ti: sapphire laser	InGaAs-SESAM	50	190	1 900	-	0.02	1996	[26]
		TDF	793 nm LD	SESAM	39.8	815000	1978	150	3.8	2012	[53]
		TDF	-	SESAM	52.6	230	1 860- 1 930	106	2	2012	[54]
		TDF	1550 nm fiber laser	SESAM	108	712	1 945	70	0.65	2015	[55]
		TDF	1.59 μm Er,Yb:fiber laser	SESAM	535	7900	1 938	50	0.09	2016	[56]
		TDF	793 nm LD	SESAM	1600	7200	1959.7	4.5	0.003	2018	[57]
Ho³⁺	Solid	Ho:YLiF₄	1 940 nm Tm: fiber laser	InGaAsSb-SESAM	122	1100	2064	580	4.75	2011	[38]
	Solid	Ho:YAG ceramic	1908nm Tm:fiber laser	GaSb-SESAM	82.1	2100	2064	230	2.8	2016	[58]
	Fiber	HDF	1150 nm LD	SESAM	7.8	2230	2094	28	3.7	2016	[59]
Tm³⁺/Ho³⁺		Tm,Ho:KY(WO₄)₂	802 nm Ti: sapphire laser	InGaAsSb-SESAM	132	3300	2057	315	2.38	2009	[28]
	Solid	Tm,Ho:TZN	792 nm Ti: sapphire laser	InGaAsSb-SESAM	143	630	2 012	38	0.27	2010	[39]
		Tm,Ho:KY(WO₄)₂	802 nm Ti: sapphire laser	InGaAsSb-SESAM	118	570	2055	130	1.1	2010	[60]
		Tm,Ho:NaY(WO₄)₂	795 nm Ti: sapphire laser	InGaAsSb-SESAM	144	191	2058	82	0.57	2010	[29]
		Tm,Ho:YAP	791 nm Ti:sapphire laser	InGaAs-SESAM	107	40400	2064.5	132	1.23	2013	[61]
		Tm,Ho:YAG	726-859 nm Ti:sapphire laser	GaSb-SESAM	106.9	21300	2091	63	0.59	2013	[31]
		Tm,Ho:KLu(WO₄)₂	802 nm Ti:sapphire laser	InGaSb-SESAM	93	7200	2058	155	1.67	2015	[62]
		Tm,Ho:CaYAlO₄	795 nm Ti:sapphire laser	InGaAsSb-SESAM	80.45	87	2024.6	27	0.34	2018	[63]
		Tm,Ho:CNGG	-	GaSb-SESAM	89.3	73	2061	36	0.4	2020	[64]
		Tm,Ho:LiLuF₄	Ti:sapphire laser	GaAs-SESAM	98.04	12000	1895	350	3.51	2020	[65]
	Fiber	THDF	-	InGaSb -SESAM	50	750	1 972	20	0.4	2007	[66]
		THDF	799 nm LD	InGaSb-SESAM	24.4	1100	2060	10	0.4	2011	[67]
		THDF	1.56 μm LD	SESAM	38.75	600	1 980	15	0.4	2011	[68]

Table 3. Development on the ultrafast Tm³⁺/ Ho³⁺ doped 2 μm lasers based on the low-dimension nanomaterial saturable absorber mode-locking

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Table 3. Development on the ultrafast Tm³⁺/ Ho³⁺ doped 2 μm lasers based on the low-dimension nanomaterial saturable absorber mode-locking

Doped ions	Material type	Gain materials	Pump sourse	Saturable absorber	Repetition rate/MHz	Pulse duration/fs	Wavelength/nm	Output power/mW	Pulse energy/nJ	Year	Ref.
Tm³⁺	Solid	Tm:YAP	795 nm LD	Graphene	71.8	~10000	2 023	268	3.7	2011	[70]
		Tm:YLF	Ti:sapphire laser	SWCNT	-	19000	1 888	55	-	2011	[79]
		Tm:Lu₂O₃	798 nm Ti:sapphire laser	SWCNT	88	175	2070	36	0.41	2012	[80]
		Tm:KLuW	802 nm Ti:sapphire laser	SWCNT	88	141	2 037	26	0.3	2012	[81]
		Tm:CLNGG	790 nm LD	Graphene	98.7	729	2 018	60.2	0.61	2012	[72]
		Tm:YAP	800 nm Ti:sapphire laser	Graphene	71.8	10000	2 023	268	3.7	2012	[82]
		Tm:Lu₂O₃	796 nm Ti:sapphire laser	Graphene	110	410	2067	270	0.13	2013	[83]
		Tm:YAG ceramic	790 nm LD	Graphene	98.7	2800	2 016	158	0.08	2015	[73]
		Tm:MgWO₄	796 nm Ti:sapphire laser	Graphene	87	86	2 017	96	1.1	2017	[84]
		Tm:CNNGG	785 nm Ti:sapphire laser	SWCNT	90	84	2 018	22	0.24	2018	[85]
		Tm:CLNGG	785 nm Ti:sapphire laser	SWCNT	86	78	2 017	54	0.63	2018	[86]
		Tm:LuYO₃	795 nm Ti:sapphire laser	SWCNT	72.6	57	2 045	63	0.87	2019	[87]
		Tm:YAG	792 nm LD	MoS₂	232.2	280000	2 011 & 2 017	200	0.86	2020	[88]
	Fiber	TDF	1.57 μm Er fiber laser	SWCNT	37	1320	1 930	3.4	0.09	2008	[69]
		TDF	1.57 μm Er fiber laser	SWCNT	45	750	1 885	25	0.5	2009	[89]
		TDF	790 nm LD	Graphene	3.17	-	2 007	1.8	0.56	2012	[71]
		TDF	-	Graphene	6.46	3600	1 940	2	0.4	2012	[90]
		TDF	Er fiber laser	Graphene	506	58	-	-	1	2012	[91]
		TDF	1.56 μm Er fiber laser	SWCNT	6.71	2300	1 947	3	0.45	2013	[92]
		TDF	1.57 μm Er,Yb:fiber laser	Graphene	20.5	1200	1 884	1.35	0.06	2013	[93]
Tm³⁺	Fiber	TDF	1.55 μm Er fiber laser	Graphene	16.93	2100	1953.3	1.41	0.08	2013	[94]
		TDF	1.55 μm Er,Yb:fiber laser	MoS₂	9.67	843000	1 905	150	15.5	2015	[77]
		TDF	1568 nm LD	BP	36.8	739	1 910	1.5	0.0407	2015	[78]
		TDF	1.57 μm Er fiber laser	CNT	25.76	152	1 972	4.85	0.19	2016	[95]
		TDF	1.56 μm Er fiber laser	Graphene	19.31	773	1 910	115	6	2016	[74]
		TDF	1.56 μm LD	TIs-Sb₂Te₃	39.5	890	1 945	1.2	0.03	2016	[76]
		TDF	1.56 μm Er,Yb:fiber laser	Graphene	58.87	205	1 945	13	0.22	2017	[96]
		TDF	1.55 μm LD	WTe₂	18.72	1250	1915.5	39.9	2.13	2017	[97]
		TDF	1.55 μm LD	MoTe₂	15.37	1300	1934.85	212	13.8	2018	[98]
		TDF	1.55 μm LD	SWCNT	21.4	211	-	36	1.68	2019	[99]
		TDF	1.55 μm LD	CNT	-	910-6430	1733-2 033	-	-	2019	[100]
Ho³⁺	Fiber	HDF	1 940 nm Tm fiber laser	BP	29.1	1300	2094	11	0.379	2017	[101]
		HDF	1 940 nm Tm fiber laser	Graphene	21.13	190	2060	54	2.55	2018	[102]
		HDF	Tm fiber laser	CNT	22.13	212	2080	84	3.79	2019	[103]
Tm³⁺/ Ho³⁺	Solid	Tm, Ho:KLu(WO₄)₂	802 nm Ti:sapphire laser	SWCNT	91	2800	2060	97	1.07	2014	[104]
		Tm,Ho:CNGG	786 nm Ti:sapphire laser	SWCNT	102	76	2081	67	0.66	2018	[105]
		Tm,Ho:CLNGG	796 nm Ti:sapphire laser	SWCNT	99.28	67	2083	-	-	2019	[106]
	Fiber	THDF	1.55 μm LD	TIs-Bi₂Te₃	27.9	795	1 935	1	-	2014	[75]
		THDF	1570 nm fiber laser	TIs-Bi₂Te₃	21.5	1260	1909.5	-	-	2015	[107]
		THDF	1.55 μm LD	WS₂	34.8	1300	1 941	0.6	0.017	2015	[108]
		THDF	1566 nm LD	VSe₂	11.6	1400	1 912	-	-	2021	[109]

Table 4. Development on the mode-locked Tm³⁺/Ho³⁺ doped ultrafast 2 μm lasers based on artificial SA nonlinear optical effects

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Table 4. Development on the mode-locked Tm³⁺/Ho³⁺ doped ultrafast 2 μm lasers based on artificial SA nonlinear optical effects

Doped ions	Material type	Gain materials	Pump sourse	Artificial SA	Repetition rate/MHz	Pulse duration/fs	Wavelength/nm	Output power/mW	Pulse energy/nJ	Year	Ref.
注：SA: Saturable absorber，可饱和吸收体；TD: Thin disk，薄片；MOPA: Master oscillator power-amplifier，主振荡功率放大；TDFL: Tm-doped fiber laser，Tm³⁺掺杂光纤激光器；EYDFL: Er-Yb co-doped fiber laser，Er³⁺/Yb³⁺离子共掺光纤激光器
Tm³⁺	Solid	Tm:YLF	780 nm Ti:sapphire laser	Kerr-lens	41.5	514	2303	14.4	0.35	2017	[111]
		Tm:Sc₂O₃	1.59 μm Er,Yb:fiber laser	Kerr-lens	93.8	72	2108	130	1.38	2020	[113]
		Tm:Lu₂O₃ & Tm:Sc₂O₃	1611 nm Er:Yb MOPA	Kerr-lens	93.3	41	2094	42	0.45	2021	[114]
Ho³⁺	Solid	Ho:YAG TD	1.908 µm TDFL	Kerr-lens	77	270	2090	28000	363	2017	[110]
Tm³⁺	Fiber	TDF	783 nm Ti:sapphire laser	NPR	-	350-500	1798-1 902	0.24	13.74	1995	[115]
		TDF	793 nm LD	NPR	41.4	173	1 974	167	4	2008	[119]
		TDF	793 nm LD	NPR	41.4	1200	1 976	178	4.3	2008	[120]
		TDF	1.5 μm Er fiber laser	NPR	9.78	770	1 982	1.5	0.15	2011	[121]
		TDF	1575 nm laser	NPR & SAM	19.7	482	1 927	13.2	0.67	2012	[122]
		TDF	1575 nm Er fiber laser	NPR	45.42	119	1 912	7.8	0.17	2012	[123]
		TDF	1561 nm Er fiber laser	NPR	6.37	-	1942.2	110	17.3	2013	[124]
		TDF	1550 nm Er fiber laser	NPR & SAM	22.9	200	1 950	16	0.7	2014	[125]
		TDF	793 nm LD	NPR	1.902	2200	1992.7	0.142	0.0746	2014	[126]
		TDF	793 nm Ti:sapphire laser	NPR	67.5	45	1 880	13	0.19	2014	[127]
		TDF	793 nm LD	NPR	2.68	3100	1 862	3	1.12	2015	[128]
		TDF	1569 nm Er fiber laser	NPR	20-30	130	-	-	7.6	2015	[129]
		TDF	793 nm LD	NPR	6.32	406	2003.2	-	12.342	2016	[130]
		TDF	1550 nm Er fiber laser	NPR	11.6	350	1 890	90	7.8	2017	[131]
		TDF	-	NPR	-	142.8	1 950	370	31	2018	[132]
		TDF	1610 nm EYDFL	NPR	10.62	534	1 988	189	17.8	2019	[133]
Ho³⁺	Fiber	HDF	1 950 nm Tm fiber laser	NPR & SAM	65	920	2 040-2070	-	0.8	2017	[116]
Ho³⁺	Fiber	HDF	1 950 nm fiber laser	NPR	13.2	370000	2133	68.6	5.2	2018	[134]
Tm³⁺	Fiber	TDF	1570 nm fiber laser	NLMMI	19.82	1400	1 888	-	-	2017	[117]
Tm³⁺	Fiber	TDF	786 nm laser	NALM	4.75	682	-	41	8.75	2012	[135]
		TDF	786 nm LD	NALM	10.4	1500	2 034	0.66	0.063	2013	[136]
		TDF	793 nm LD	NOLM	1.514	341	2 017	377.3	249.32	2014	[137]
		TDF	793 nm LD	NALM	9.1	460	1 990	301	32.72	2015	[138]
		TDF	793 nm LD	NPR & NOLM	2.66	258	2 007	112	42.11	2017	[139]
		TDF	793 nm LD	NOLM	2.85	384	1988.8	720	252.6	2020	[118]
		TDF	1550 nm Er fiber laser	NALM	3.228	317	1946.4	32800	10100	2021	[140]
Ho³⁺	Fiber	HDF	1.9 μm TDFL	NAbLM	7.765	-	2058	-	-	2020	[141]
Ho³⁺	Fiber	HDF	Tm laser	NALM	41.7	-	2 050	4	0.095	2020	[142]

Table 5. Development of Tm³⁺/ Ho³⁺ doped 2 μm ultrafast laser amplification techniques

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Table 5. Development of Tm³⁺/ Ho³⁺ doped 2 μm ultrafast laser amplification techniques

Doped ions	Material type	Gain materials	Repetition rate/kHz	Pulse duration/ps	Pulse energy/mJ	Cooling type	Year	Ref.
Tm³⁺	Solid	Tm:YAP	1	0.38	0.7	-	2015	[148]
Tm³⁺	Solid	Tm:YAP	1	0.36	0.015	TEC	2018	[149]
Ho³⁺	Solid	Ho:YAG	5	0.44	3	Water cooling	2013	[143]
		Ho:YLF	10	300	11	TEC	2013	[150]
		Ho:YLF	10	50	1.1	Water cooling	2015	[151]
		Ho:YLF	1/0.01	1.9	6.9/13	TEC	2015	[144]
		Ho:YLF	100	10	39	Liquid nitrogen	2015	[152]
		Ho:YLF	1	37	34	Water cooling	2015	[145]
		Ho:YLF	0.7	-	16	Water cooling	2016	[153]
		Ho:YLF	10/500	8.3/5.5	0.145/0.0112	TEC	2018	[146]
		Ho:YLF	10	6.3	0.1	TEC	2018	[154]
		Ho:YLF	1	2.4	52.5	Water cooling	2020	[147]
		Ho:YLF	1	6.8	28	Water cooling	2020	[155]
		Ho:YAG	10	3.2	1.6	-	2021	[156]

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Jiajia Mao, Ping Hu, Xue Zhou, Huahang Wang, Hongkun Nie, Bingzheng Yan, Ruihua Wang, Baitao Zhang, Tao Li, Kejian Yang, Jingliang He. Research development on Tm³⁺/ Ho³⁺ ions doped mid-infrared ultrafast lasers (Invited)[J]. Infrared and Laser Engineering, 2021, 50(8): 20210436

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Paper Information

Category:

Received: Jun. 28, 2021

Accepted: --

Published Online: Nov. 2, 2021

The Author Email: Kejian Yang (k.j.yang@sdu.edu.cn), Jingliang He (jlhe@sdu.edu.cn)

DOI:10.3788/IRLA20210436

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

Table 1. Development on the actively mode-locked Tm3+/ Ho3+ doped 2 μm lasers

Table 1. Development on the actively mode-locked Tm3+/ Ho3+ doped 2 μm lasers

Table 2. Development on the SESAM mode-locked Tm3+/ Ho3+ doped 2 μm lasers

Table 2. Development on the SESAM mode-locked Tm3+/ Ho3+ doped 2 μm lasers

Table 3. Development on the ultrafast Tm3+/ Ho3+ doped 2 μm lasers based on the low-dimension nanomaterial saturable absorber mode-locking

Table 3. Development on the ultrafast Tm3+/ Ho3+ doped 2 μm lasers based on the low-dimension nanomaterial saturable absorber mode-locking

Table 4. Development on the mode-locked Tm3+/Ho3+ doped ultrafast 2 μm lasers based on artificial SA nonlinear optical effects

Table 4. Development on the mode-locked Tm3+/Ho3+ doped ultrafast 2 μm lasers based on artificial SA nonlinear optical effects

Table 5. Development of Tm3+/ Ho3+ doped 2 μm ultrafast laser amplification techniques

Table 5. Development of Tm3+/ Ho3+ doped 2 μm ultrafast laser amplification techniques

Table 1. Development on the actively mode-locked Tm³⁺/ Ho³⁺ doped 2 μm lasers

Table 1. Development on the actively mode-locked Tm³⁺/ Ho³⁺ doped 2 μm lasers

Table 2. Development on the SESAM mode-locked Tm³⁺/ Ho³⁺ doped 2 μm lasers

Table 2. Development on the SESAM mode-locked Tm³⁺/ Ho³⁺ doped 2 μm lasers

Table 3. Development on the ultrafast Tm³⁺/ Ho³⁺ doped 2 μm lasers based on the low-dimension nanomaterial saturable absorber mode-locking

Table 3. Development on the ultrafast Tm³⁺/ Ho³⁺ doped 2 μm lasers based on the low-dimension nanomaterial saturable absorber mode-locking

Table 4. Development on the mode-locked Tm³⁺/Ho³⁺ doped ultrafast 2 μm lasers based on artificial SA nonlinear optical effects

Table 4. Development on the mode-locked Tm³⁺/Ho³⁺ doped ultrafast 2 μm lasers based on artificial SA nonlinear optical effects

Table 5. Development of Tm³⁺/ Ho³⁺ doped 2 μm ultrafast laser amplification techniques

Table 5. Development of Tm³⁺/ Ho³⁺ doped 2 μm ultrafast laser amplification techniques