Fig. 1. Results of tolerable current test for single MWCNT^[22]. (a) AFM image showing tungsten leads connected to a single MWCNT under irradiation of ion beam; (b) resistance stability of MWCNT at ambient temperature of 250 ℃after the measurement lasting about 334 h

Fig. 2. Two geometric types of contact. (a) End contact of CNT with Co tips^[23]; (b) side contact of CNT with gold electrodes^[26]

Fig. 3. Snapshots for configurations of Ni-(7,7) CNT systems at 1400 K^[44]. (a) 2 ps; (b) 6 ps; (c) 13ps; (d) 80 ps; (e) 200 ps

Fig. 4. Atomic configurations of SWCNT and Ag particles at different temperatures^[46]. (a) 300 K; (b) 400 K; (c) 500 K; (d) 650 K; (e) 700 K; (f) 800 K

Fig. 5. Relationship between van der Waals and simulation time in AgNW-MWCNT system and different AgNW-SWCNT systems at 500 K^[49]

Fig. 6. Nb-SWCNT FET formed after high temperature annealing^[60]. (a) SEM image of FET based on Nb-SWCNT; (b) I_DS-V_GS curves for Nb₂C-, TiC- and Pd-contacted SWCNT-FET when V_DS = 0.1 V

Fig. 7. FET formed by Mo-SWCNT^[61]. (a) Schematic diagram of side-contact between Mo and SWCNT; (b) schematic diagram of end-contact between Mo₂C and SWCNT; (c) transfer characteristic curves of FET; (d) output characteristic curves of FET at room temperature; (e) output characteristic curves for FET at V_GS=-6 V for different temperatures

Fig. 8. Electrical properties of FET formed by SWCNT-Pt^[64]. (a) Evolution of I_sd-V_sd of SWCNT at room temperature with increasing height and duration of applied pulse (inset: AFM image of single SWCNT connected to Pt electrodes); (b) plot of I_sd -V_G at V_sd = 1 mV for various temperatures after applying a pulse with pulse voltage of 7 V and duration of 2 μs

Fig. 9. SWCNTs connected with metal electrodes by high frequency induction local heating^[65]. (a) Schematic diagram of high frequency induction local heating technology; (b) SEM image of SWCNTs interconnected with metal electrode

Fig. 10. Schematic diagrams of DEP experiment^[69]. (a) Diagram of DEP deposited metal; (b) diagram before and after DEP deposition

Fig. 11. Metallic organic compound deposition via EBID to weld MWCNT-Au^[72]. (a) Schematic diagram of MWCNT-Au by EBID welding; (b) SEM image after EBID

Fig. 12. Schematic diagram and SEM image of connection between CNT and metal electrode. (a) Schematic of the robotic system for characterizing the side contact between a CNT and metal electrodes inside an FE-SEM apparatus; (b) CNT selection and pick-up by AFM probe; (c) magnification of the picked CNT and CNT welded on C1 via EBID (AFM); (d) connecting of the CNT to C2(Au) by EBID

Fig. 13. CNT connected to metal electrode by ultrasonic nanowelding^[82]. (a) Schematic diagram of ultrasonic nanowelding process; (b) SEM image of SWCNT-Ti before welding; (c) SEM image of SWCNT-Ti after welding

Fig. 14. Simulation results of SWCNT under ion irradiation^[89]. (a) SWCNT connected to Pt substrate by ion irradiation; (b) SWCNT connected to graphene by ion irradiation

Fig. 15. CNTs connected to Au electrodes by electron beam irradiation^[90]. (a) SEM image of CNTs deposited on Au metal electrodes(a represents CNTs, b represents nano-particles, and c represents bundle of CNTs; (b) relationship between electron beam irradiation dose and resistance

Fig. 16. Formation of an MWCNT-Co-MWCNT heterojunction from a Co-filled MWCNT subjected to electron irradiation at 200 keV^[91]. (a) TEM image of Co-filled MWCNT; (b) TEM image of MWCNT/Co after 6 min irradiation (Co nanowire is expelled to the MWCNT surface); (c) Co nanowire is connected to MWCNT, forming MWCNT-Co-MWCNT heterojunction after 11 min irradiation; (d) periodic FeCo-MWCNT heterojunction, formed by repeated irradiation at different positions of FeCo-filled MWCNT; (e) sketch of generation of MWCNT-metal-MWCNT heterojunctions with metal-filled MWCNT by electron beam irradiation

Fig. 17. SEM images and I-V curves of the MWCNTs and W electrodes before and after laser processing^[96]. (a) SEM image before laser processing; (b) SEM image after laser processing; (c) I-V curve of MWCNT-W before laser processing; (d) I-V curve of MWCNT-W after laser processing

Fig. 18. SEM images of laser-induced connection of SWCNTs and metal electrodes and its electrical properties^[97]. (a) SEM image of SWCNTs-Al; (b) SEM image of SWCNTs-Ni; (c) SEM image of SWCNTs-Ti; (d) J-E curve of SWCNTs-Al cathode; (e) F-N curve of SWCNTs-Al cathode; (f) field emission stability curve of SWCNTs-Al cathode

Fig. 19. Femtosecond pulsed laser irradiation induces interconnection between SWCNT and metal electrodes^[102]. (a) SEM image before connection of SWCNTS and Ni; (b) SEM image after connection of SWCNTS and Ni; (c) I-V curves of FET before and after connection; (d) diagram of interface resistance changes of different samples before and after connection

Fig. 20. CFA circuit is prepared by the laser selective sintering^[107]. (a) SEM image of nAg-MWNTs bridging Ag flakes; (b) CFA circuit board formed by laser sintering; (c) flexible LED device constructed by CFA circuit; (d) resistance of CFA circuit varying with line width and laser power; (e) conductivity stability of laser-sintered CFA circuit in air environment

Fig. 21. Results of electrical property test^[113]. (a) I-V characteristic curves of O₂ plasma and CNT after polishing; (b) cumulative distributions of resistance of O₂ plasma and CNT after polishing

Fig. 22. Schematic diagrams of self-soldering AMA nanostructure^[114]. (a) Schematic of soldering process of AMA nanostructure; (b)TEM image of AWA junction point after self-soldering process; (c) TEM image of silver nanoelectrode after self-soldering process