[1] Chen H Y, Liu K W, Hu L F et al. New concept ultraviolet photodetectors[J]. Materials Today, 18, 493-502(2015).

[2] Wang Y, Qian Y S, Kong X Y. Photon counting based on solar-blind ultraviolet intensified complementary metal-oxide-semiconductor (ICMOS) for corona detection[J]. IEEE Photonics Journal, 10, 7000919(2018).

[3] Zhao T F, Li Y M, Yuan L. Research on relay selection of armored formations wireless UV covert communication[J]. Opto-Electronic Engineering, 46, 63-70(2019).

[4] Yuan Z L, Hu Y J, Lü J H et al. Characteristics of ZnO nanowire arrays/PVK heterojunction ultraviolet photodetector[J]. Acta Optica Sinica, 42, 2204001(2022).

[5] Su L Q, Wang D K, Fang D et al. Quantum dots modified ZnO based fast-speed response ultraviolet photodetector[J]. Chinese Journal of Lasers, 49, 1303001(2022).

[6] Wang J, Luo L B. Advances in Ga2O3-based solar-blind ultraviolet photodetectors[J]. Chinese Journal of Lasers, 48, 1100001(2021).

[7] Vert A, Soloviev S, Sandvik P. SiC avalanche photodiodes and photomultipliers for ultraviolet and solar-blind light detection[J]. Physica Status Solidi (a), 206, 2468-2477(2009).

[8] Powell A R, Rowland L B. SiC materials-progress, status, and potential roadblocks[J]. Proceedings of the IEEE, 90, 942-955(2002).

[9] Yi X, Xie S Y, Liang B L et al. Extremely low excess noise and high sensitivity AlAs0.56Sb0.44 avalanche photodiodes[J]. Nature Photonics, 13, 683-686(2019).

[10] Campbell J C. Recent advances in avalanche photodiodes[J]. Journal of Lightwave Technology, 34, 278-285(2016).

[11] Chunnilall C J, Degiovanni I P, Kück S et al. Metrology of single-photon sources and detectors: a review[J]. Optical Engineering, 53, 081910(2014).

[12] Su L L, Zhou D, Lu H et al. Recent progress of SiC UV single photon counting avalanche photodiodes[J]. Journal of Semiconductors, 40, 65-75(2019).

[13] Bai X G, Liu H D, McIntosh D C et al. High-detectivity and high-single-photon-detection-efficiency 4H-SiC avalanche photodiodes[J]. IEEE Journal of Quantum Electronics, 45, 300-303(2009).

[14] Zhou D, Liu F, Lu H et al. High-temperature single photon detection performance of 4H-SiC avalanche photodiodes[J]. IEEE Photonics Technology Letters, 26, 1136-1138(2014).

[15] Li L H, Zhou D, Lu H et al. 4H-SiC avalanche photodiode linear array operating in Geiger mode[J]. IEEE Photonics Journal, 9, 6804207(2017).

[16] Zhou X Y, Tan X, Lü Y J et al. Single-photon-counting performance of 4H-SiC avalanche photodiodes with a wide-range incident flux[J]. IEEE Photonics Technology Letters, 32, 847-850(2020).

[17] Cai X L, Zhou D, Yang S et al. 4H-SiC SACM avalanche photodiode with low breakdown voltage and high UV detection efficiency[J]. IEEE Photonics Journal, 8, 6805107(2016).

[18] Zhou X Y, Li J, Lu W L et al. Large-area 4H-SiC avalanche photodiodes with high gain and low dark current for visible-blind ultraviolet detection[J]. Chinese Optics Letters, 16, 060401(2018).

[19] Kou J Q, Tian K K, Chu C S et al. Optimization strategy of 4H-SiC separated absorption charge and multiplication avalanche photodiode structure for high ultraviolet detection efficiency[J]. Nanoscale Research Letters, 14, 396(2019).

[20] Zhang H, Su L L, Zhou D et al. Crosstalk analysis of SiC ultraviolet single photon avalanche photodiode arrays[J]. IEEE Photonics Journal, 11, 6804008(2019).

[21] Zhou X Y, Tan X, Lü Y J et al. 128-pixel arrays of 4H-SiC UV APD with dual-frequency PECVD SiNx passivation[J]. Optics Express, 28, 29245-29252(2020).

[22] Su L L, Zhou D, Liu Q et al. Effect of a single threading dislocation on electrical and single photon detection characteristics of 4H-SiC ultraviolet avalanche photodiodes[J]. Chinese Physics Letters, 37, 068502(2020).

[23] Yang S, Zhou D, Cai X L et al. Analysis of dark count mechanisms of 4H-SiC ultraviolet avalanche photodiodes working in Geiger mode[J]. IEEE Transactions on Electron Devices, 64, 4532-4539(2017).