Acta Optica Sinica, Volume. 43, Issue 3, 0304001(2023)
SiC UV Avalanche Photodiode with High Voltage Withstanding Capability and Low Dark Count Rate
Fig. 2. Simulated electric field distributions of double mesa SiC SACM APD. (a) 2D electric field distribution; (b) 1D horizontal electrical field profile along line I marked in 2D electrical field profile; (c) 1D vertical electrical field profile along line II marked in 2D electrical field profile
Fig. 3. Current-voltage curves. (a) Current-voltage and gain curves of SiC SACM APD; (b) dark current curves of SiC SACM APD and SiC PIN APD
Fig. 5. Single photon detection performance curves. (a) DCR-overbias curves of SiC SACM APD and SiC PIN APD; (b) DCR-SPDE curve of SiC SACM APD
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Chengdong Yang, Kaipeng Xia, Wenye Ma, Yanqi Gao, Zhihao Yu, Linlin Su. SiC UV Avalanche Photodiode with High Voltage Withstanding Capability and Low Dark Count Rate[J]. Acta Optica Sinica, 2023, 43(3): 0304001
Category: Detectors
Received: Jun. 14, 2022
Accepted: Aug. 3, 2022
Published Online: Feb. 13, 2023
The Author Email: Su Linlin (sulinlin@cwxu.edu.cn)