Acta Optica Sinica, Volume. 43, Issue 3, 0304001(2023)

SiC UV Avalanche Photodiode with High Voltage Withstanding Capability and Low Dark Count Rate

Chengdong Yang, Kaipeng Xia, Wenye Ma, Yanqi Gao, Zhihao Yu, and Linlin Su*
Author Affiliations
  • School of Electronic Information Engineering, Wuxi University, Wuxi 214105, Jiangsu, China
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    Figures & Tables(6)
    Cross section schematic of double-mesa SiC SACM APD
    Simulated electric field distributions of double mesa SiC SACM APD. (a) 2D electric field distribution; (b) 1D horizontal electrical field profile along line I marked in 2D electrical field profile; (c) 1D vertical electrical field profile along line II marked in 2D electrical field profile
    Current-voltage curves. (a) Current-voltage and gain curves of SiC SACM APD; (b) dark current curves of SiC SACM APD and SiC PIN APD
    Schematic diagram of passive quenching circuit
    Single photon detection performance curves. (a) DCR-overbias curves of SiC SACM APD and SiC PIN APD; (b) DCR-SPDE curve of SiC SACM APD
    Spectral response curve of SiC SACM APD at room temperature
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    Chengdong Yang, Kaipeng Xia, Wenye Ma, Yanqi Gao, Zhihao Yu, Linlin Su. SiC UV Avalanche Photodiode with High Voltage Withstanding Capability and Low Dark Count Rate[J]. Acta Optica Sinica, 2023, 43(3): 0304001

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    Paper Information

    Category: Detectors

    Received: Jun. 14, 2022

    Accepted: Aug. 3, 2022

    Published Online: Feb. 13, 2023

    The Author Email: Su Linlin (sulinlin@cwxu.edu.cn)

    DOI:10.3788/AOS221314

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