Simulation Study on Single Event Effects of Heavy Ion Incident Angle and LET on FinFET SRAM

ZHANG Qi; YUE Suge; ZHANG Yanlong; YUAN Jingshuang; ZHU Yongqin; LI Tongde; WANG Liang

doi:10.13911/j.cnki.1004-3365.240287

Microelectronics, Volume. 55, Issue 1, 16(2025)

Simulation Study on Single Event Effects of Heavy Ion Incident Angle and LET on FinFET SRAM

ZHANG Qi^1,2, YUE Suge^1,2, ZHANG Yanlong^1,2, YUAN Jingshuang^1,2, ZHU Yongqin^1,2, LI Tongde^1,2, and WANG Liang^1,2

Author Affiliations

¹Beijing Microelectronics Technology Institute, Beijing 100076, P. R. China

²Laboratory of Science and Technology on Radiation-Hardened Integrated Circuits in CASC, Beijing 100076, P. R. China

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ZHANG Qi, YUE Suge, ZHANG Yanlong, YUAN Jingshuang, ZHU Yongqin, LI Tongde, WANG Liang. Simulation Study on Single Event Effects of Heavy Ion Incident Angle and LET on FinFET SRAM[J]. Microelectronics, 2025, 55(1): 16

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Paper Information

Special Issue:

Received: Aug. 18, 2024

Accepted: Jun. 19, 2025

Published Online: Jun. 19, 2025

The Author Email:

DOI:10.13911/j.cnki.1004-3365.240287

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology