[1] [1] T. Hayakawa, T. Suzuki, T. Uesugi et al.. Mechanism of residue formation in silicon trench etching using a bromine-based plasma [J]. Jpn. J. Appl. Phys., 1998, 37(Part 1, 1):5～9

[2] [2] K. Tachimana, H. Kamisugi, T. Kawasaki. Behavior of F atoms and CF2 radicals in fluorocarbon plasmas for SiO2/Si etching [J]. Jpn. J. Appl. Phys., 1999, 38(Part 1, 7B):4367～4372

[3] [3] M. R. Rakhshandehroo, J. W. Weigold, W.-C. Tian et al.. Dry etching of Si field emitters and high aspect ratio resonators using an inductively coupled plasma source [J]. J. Vac. Sci. Tech. B, 1998, 16(5):2849～2854

[4] [4] M. H. Yun, V. A. Burrows, M. N. Kozicki. Analysis of KOH etching of (100) silicon on insulator for the fabrication of nanoscale tips [J]. J. Vac. Sci. Tech. B, 1998, 16(5):2844～2848

[5] [5] L. B. Goetting, T. Deng, G. M. Whitesides. Microcontact printing of alkanephosphonic acids on aluminum: Pattern transfer by wet chemical etching [J]. Langmuir, 1999, 15(4):1182～1191