Fig. 1. Schematic of EMDRS

Fig. 2. Analog parameters. (a) Simulated sample; (b) light spot for scanning

Fig. 3. Simulation results of broken-wire defects. (a) Simulation sample; (b) scanned image; (c) deblurred image; (d) signal intensity profile of the areas with lines in (b) and (c)

Fig. 4. Simulation results of pinhole defects. (a) Simulation sample; (b) scanned image; (c) deblurred image; (d) signal intensity profiles of the areas with lines in (b) and (c)

Fig. 5. Simulation results of phase defects. (a) Amplitude distribution of the sample; (b) phase distribution of the sample; (c) scanned image; (d) deblurred image; (e) signal intensity profile of the areas with lines in (c) and (d)

Fig. 6. Simulation results of three defects after adding Gaussian noise. (a) Simulation result of broken-wire defect with noise amplitude of 1%; (b) simulation result of pinhole defect with noise amplitude of 1%; (c) simulation result of phase defect with noise amplitude of 1%; (d) simulation result of pinhole defect with noise amplitude of 4%

Fig. 7. Simulation results of the samples with 10 nm pinhole defect at different positions. (a)(b) Simulated sample with pinhole defect deviating from the center of the line and its simulated results; (c)(d) simulated sample with pinhole defect at that edge of the line and its simulation results

Fig. 8. Simulation results of 10 nm pinhole defect under different sizes of light spot. (a)(b) A spot with a horizontal diameter of 81 nm and a vertical diameter of 54 nm and its simulation results; (c)(d) a spot with a horizontal diameter of 81 nm and a vertical diameter of 68 nm and its simulation results; (e)(f) a spot with a horizontal diameter of 81 nm and a vertical diameter of 90 nm its simulation results