Fig. 1. Cross sections of different energy neutrons interacting with various nuclear atoms in semiconductor: (a) Cross sections of B and Si isotopes, the neutron energy interval is 10^–11−1 MeV; (b) cross sections of¹⁴N, ¹⁶O, ²⁷Al, ²⁸Si and ¹⁸⁴W, the neutron energy interval is 1−150 MeV. 半导体中各核素的中子反应截面　(a)与B, Si的同位素的反应截面, 对应中子能量范围10^–11−1 MeV; (b)与¹⁴N, ¹⁶O, ²⁷Al, ²⁸Si, ¹⁸⁴W的反应截面, 对应中子能量范围1−150 MeV

Fig. 2. Neutron spectrum of the experiments.实验束线中子能谱

Fig. 3. 65 nm MCU neutron test site: (a) The device under test and the 2 cm ejection hole; (b) with 2 mm cadmium shielding; (c) without cadmium shielding.65 nm MCU散裂中子辐照测试现场图　(a) DUT与出射孔相对位置图; (b)含2 mm厚镉屏蔽体测试现场图; (c)无镉屏蔽测试现场图

Fig. 4. The LET values and ranges of secondary particles from thermal neutrons interacting with ¹⁰B. 热中子与¹⁰B反应产生次级粒子在不同能量下的LET与硅中射程

Fig. 5. The sketch of thermal neutron interacting with ¹⁰B in 65 nm MCU. 65 nm MCU内部热中子与¹⁰B反应次级粒子沉积能量示意图