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Laser & Optoelectronics Progress, Volume. 57, Issue 23, 231604(2020)

Design and Analysis of a Heterojunction AlGaAs/GaAs PIN Diode Structure

Li Liu1,2, Caiyan Li1, Qilian Zhang1, Xiaowei Sun1, and Hao Sun1、*
Author Affiliations
  • 1Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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    AbstractGet PDF(in Chinese)
    Figures&Tables (10)
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    References (16)
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    Figures & Tables(10)
    PIN diode structure and its equivalent circuit. (a) PIN diode structure; (b) forward bias equivalent circuit; (c) reverse bias equivalent circuit

    Fig. 1. PIN diode structure and its equivalent circuit. (a) PIN diode structure; (b) forward bias equivalent circuit; (c) reverse bias equivalent circuit

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    Structure of heterojunction PIN diode

    Fig. 2. Structure of heterojunction PIN diode

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    S parameters of heterojunction and homojunction

    Fig. 3. S parameters of heterojunction and homojunction

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    Insertion loss of different x in AlxGa1-xAs

    Fig. 4. Insertion loss of different x in AlxGa1-xAs

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    I-V characteristics of PIN diode with different I-layer thicknesses obtained by TCAD simulation. (a) Forward bias; (b) reverse bias

    Fig. 5. I-V characteristics of PIN diode with different I-layer thicknesses obtained by TCAD simulation. (a) Forward bias; (b) reverse bias

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    Insertion loss at different I-layer thicknesses obtained by TCAD simulation

    Fig. 6. Insertion loss at different I-layer thicknesses obtained by TCAD simulation

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    I-V performance of PIN diode

    Fig. 7. I-V performance of PIN diode

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    Tested S parameters of PIN diode

    Fig. 8. Tested S parameters of PIN diode

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    • Table 1. Material parameters of epitaxial structure

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      Table 1. Material parameters of epitaxial structure

      LayerMaterialDoping concentration /cm-3Thickness /μm
      P-GaAsGaAs3×10190.02
      P-AlGaAsAlxGa1-xAs5×10180.20
      IGaAsNonew
      NGaAs5×10180.80

    • Table 2. Comparison of I-V characteristic obtained by test and simulation

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      Table 2. Comparison of I-V characteristic obtained by test and simulation

      ResultOpeningvoltage /VBreakdownvoltage /V
      Simulation1.0528
      Test1.0626
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    Li Liu, Caiyan Li, Qilian Zhang, Xiaowei Sun, Hao Sun. Design and Analysis of a Heterojunction AlGaAs/GaAs PIN Diode Structure[J]. Laser & Optoelectronics Progress, 2020, 57(23): 231604

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    Paper Information

    Category: Materials

    Received: Feb. 13, 2020

    Accepted: May. 25, 2020

    Published Online: Dec. 8, 2020

    The Author Email: Hao Sun (sh@mail.sim.ac.cn)

    DOI:10.3788/LOP57.231604

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology