Design and Analysis of a Heterojunction AlGaAs/GaAs PIN Diode Structure

Li Liu; Caiyan Li; Qilian Zhang; Xiaowei Sun; Hao Sun

doi:10.3788/LOP57.231604

Laser & Optoelectronics Progress, Volume. 57, Issue 23, 231604(2020)

Design and Analysis of a Heterojunction AlGaAs/GaAs PIN Diode Structure

Li Liu^1,2, Caiyan Li¹, Qilian Zhang¹, Xiaowei Sun¹, and Hao Sun^1、*

¹Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

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Li Liu, Caiyan Li, Qilian Zhang, Xiaowei Sun, Hao Sun. Design and Analysis of a Heterojunction AlGaAs/GaAs PIN Diode Structure[J]. Laser & Optoelectronics Progress, 2020, 57(23): 231604

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Paper Information

Category: Materials

Received: Feb. 13, 2020

Accepted: May. 25, 2020

Published Online: Dec. 8, 2020

The Author Email: Hao Sun (sh@mail.sim.ac.cn)

DOI:10.3788/LOP57.231604

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology