Chinese Journal of Lasers, Volume. 14, Issue 4, 225(1987)
Amorphous Si: H film grown by laser plasma induced chemical vapour deposition
Amorphous Si: H fillm has been obtained with a pulsed CO2 laser by laser plasma induced chemical vapour deposition (LPCVD). The experiment is described and the dependance of film growth rate on the related experimental parameters and the suitable depositing condition are given. Some properties of the film were measured and analyzed.
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Li Zhaolin, Zhang Zebo, Hong Xichun, Zhao Yuying, Wang Tianjuan. Amorphous Si: H film grown by laser plasma induced chemical vapour deposition[J]. Chinese Journal of Lasers, 1987, 14(4): 225
Paper Information
Category: laser devices and laser physics
Received: Feb. 13, 1986
Accepted: --
Published Online: Aug. 10, 2012
The Author Email:
CSTR:32186.14.
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