Fig. 1. Sensor array architecture

Fig. 2. Pixel structure and design. (a) Top view of layout; (b) cross-section of pixel structure; (c) simulation results of optical absorption

Fig. 3. TCAD simulation of pixel (half pixel section from center to right). (a) Doping concentration distribution; (b) electric field distribution; (c) electrostatic potential distribution; (d) impactionization distribution

Fig. 4. Chip package. (a) PLCC package for device validation; (b) module package for application

Fig. 5. SPAD BV test results. (a) BV distribution; (b) BV varying with temperature

Fig. 6. Test results of PDE. (a) PDE under full spectrum; (b) PDE varying with V_ex at 905 nm and 940 nm

Fig. 7. SPAD DCR performance. (a) DCR cumulative probability distribution; (b) DCR varying with V_ex; (c) DCR median varying with temperature

Fig. 8. Deadtime varying with temperature

Fig. 9. Timing jitter performance of device. (a) Relationship between jitter and V_ex; (b) relationship between FWHM of jitter and V_ex; (c) FWHM and FW10%M distributions of jitter; (d) temperature dependence of jitter

Fig. 10. Afterpulsing effect

Fig. 11. Test results of crosstalk of adjacent pixels. (a) Crosstalk varying with V_ex; (b) crosstalk varying with temperature

Fig. 12. Light emission distribution of a single SPAD pixel. (a) Infrared luminous image; (b) optical microscope image in visible band

Fig. 13. Chip function module diagram

Fig. 14. Gesture image captured by SPAD sensor