Chinese Optics Letters, Volume. 14, Issue 5, 051601(2016)
Preliminary study of the damage resistance of type I doubler KDP crystals at 532 nm
Fig. 1. Schematic diagram of the experimental bench used for the characterization of the bulk damage of KDP crystals.
Fig. 2. Scatter image of the bulk damage sites resulting from a single-shot 532 nm, 6.5 ns laser pulse with fluence of around
Fig. 3. Ppd versus fluence for doubler KDP crystals under 532 nm pulse irradiation with different polarizations.
Fig. 5. Size distribution of pinpoints induced by a 532 nm, 6.5 ns pulse with different fluences and polarization orientations.
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Yinbo Zheng, Lei Ding, Xinda Zhou, Rongsheng Ba, Jing Yuan, Honglei Xu, Xiaoyu Yang, Bo Chen, Jin Na, Yajun Li, Wanguo Zheng, "Preliminary study of the damage resistance of type I doubler KDP crystals at 532 nm," Chin. Opt. Lett. 14, 051601 (2016)
Category: Materials
Received: Dec. 23, 2015
Accepted: Feb. 23, 2016
Published Online: Aug. 6, 2018
The Author Email: Lei Ding (dingleigongyong@126.com)