Chinese Journal of Lasers, Volume. 44, Issue 1, 102012(2017)

Behavior Characteristics of Different Crystal Surfaces of Monocrystal Silicon Under Femtosecond Laser Irradiation

Zhang Xin*, Huang Ting, and Xiao Rongshi
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    References(24)

    [11] Kwak D, Kim J, Park S. et al. Why is (111) silicon a better mechanical material for MEMS: Torsion case[C]. ASME 2003 International Mechanical Engineering Congress and Exposition, 259-264(2003).

    [17] Krüger J, Kautek W. Ultrashort pulse laser interaction with dielectrics and polymers[M]. Berlin: Springer Berlin Heidelberg, 247-290(2004).

    [18] Wright S I, Nowell M M. EBSD image quality mapping[J]. Microscopy and Microanalysis, 12, 72-84(2006).

    [24] Saring P, Baumann A L, Kontermann S. et al. Characterization of electrical contacts on silicon (100) after ablation and sulfur doping by femtosecond laser pulses[C]. Solid State Phenomena, 205, 358-363(2014).

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    Zhang Xin, Huang Ting, Xiao Rongshi. Behavior Characteristics of Different Crystal Surfaces of Monocrystal Silicon Under Femtosecond Laser Irradiation[J]. Chinese Journal of Lasers, 2017, 44(1): 102012

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    Paper Information

    Special Issue:

    Received: Sep. 27, 2016

    Accepted: --

    Published Online: Jan. 10, 2017

    The Author Email: Xin Zhang (zhangxin2014@emails.bjut.edu.cn)

    DOI:10.3788/CJL201744.0102012

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